Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

D. A. Grützmacher; T. O. Sedgwick; A. Zaslavsky; A. R. Powell; R. A. Kiehl; W. Ziegler; J. Cotte

doi:10.1007/BF02661381

Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

D. A. Grützmacher, T. O. Sedgwick, A. Zaslavsky, A. R. Powell, R. A. Kiehl, W. Ziegler, J. Cotte

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm²/Vs at 4.2 K at a carrier density of 1.7^*10¹² cm^-2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.

Original language	English (US)
Pages (from-to)	303-308
Number of pages	6
Journal	Journal of Electronic Materials
Volume	22
Issue number	3
DOIs	https://doi.org/10.1007/BF02661381
State	Published - Mar 1993
Externally published	Yes

Keywords

Interfaces
SiGe quantum wells
resonant tunneling diodes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1007/BF02661381

Cite this

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title = "Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition",

abstract = "First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm-2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.",

keywords = "Interfaces, SiGe quantum wells, resonant tunneling diodes",

author = "Gr{\"u}tzmacher, {D. A.} and Sedgwick, {T. O.} and A. Zaslavsky and Powell, {A. R.} and Kiehl, {R. A.} and W. Ziegler and J. Cotte",

year = "1993",

month = mar,

doi = "10.1007/BF02661381",

language = "English (US)",

volume = "22",

pages = "303--308",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "3",

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TY - JOUR

T1 - Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

AU - Grützmacher, D. A.

AU - Sedgwick, T. O.

AU - Zaslavsky, A.

AU - Powell, A. R.

AU - Kiehl, R. A.

AU - Ziegler, W.

AU - Cotte, J.

PY - 1993/3

Y1 - 1993/3

N2 - First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm-2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.

AB - First structural and electrical data are reported for SiGe/Si quantum well structures grown by a new ultra clean low temperature epitaxial deposition process at atmospheric pressure. It is found that the process suppresses the segregation of germanium, possibly by a chemical termination of the surface during the growth. Mutiple-quantum-well structures with controllable well widths and abrupt interfaces have been prepared at temperatures ranging from 550 to 650°C. Magneto-transport measurements of modulation doped quantum wells reveal hole mobilities of 2000 cm2/Vs at 4.2 K at a carrier density of 1.7*1012 cm-2 and a germanium concentration of 18% in the SiGe channel. Resonant tunneling diodes grown by this technique exhibit well resolved regions of negative differential resistance within a very symmetric I-V characteristic.

KW - Interfaces

KW - SiGe quantum wells

KW - resonant tunneling diodes

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ER -

Growth of SiGe/Si quantum well structures by atmospheric pressure chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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