Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism

C. W. Hu, A. Bell, Fernando Ponce, David Smith, I. S T Tsong

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Self-assembled nanometer-scale GaN quantum dots were fabricated on 6H-SiC(0001) substrates via the formation of Ga liquid droplets and their subsequent nitridation with a supersonic gas source seeded with NH3 molecules. The entire process was observed and controlled in situ and in real time in a low-energy electron microscope. The microstructure of the quantum dots was studied by high-resolution cross-sectional transmission electron microscopy illustrating the perfectly coherent wurtzite structure of GaN quantum dots with 5 nm base width. Spatially resolved cathodoluminescence spectra yield the characteristic band edge emission near 3.48 eV for larger size GaN dots.

Original languageEnglish (US)
Pages (from-to)3236-3238
Number of pages3
JournalApplied Physics Letters
Volume81
Issue number17
DOIs
StatePublished - Oct 21 2002

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quantum dots
vapors
liquids
cathodoluminescence
wurtzite
electron microscopes
transmission electron microscopy
microstructure
high resolution
gases
molecules
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of self-assembled GaN quantum dots via the vapor-liquid-solid mechanism. / Hu, C. W.; Bell, A.; Ponce, Fernando; Smith, David; Tsong, I. S T.

In: Applied Physics Letters, Vol. 81, No. 17, 21.10.2002, p. 3236-3238.

Research output: Contribution to journalArticle

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