Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry

M. Beaudoin, P. Kelkar, M. D. Boonzaayer, W. Braun, P. Dowd, Shane Johnson, U. Koelle, C. M. Ryu, Yong-Hang Zhang

Research output: Contribution to journalConference article

2 Scopus citations

Abstract

Precise control of layer thickness and alloy compositions are very critical for the successful growth of vertical cavity surface emitting lasers (VCSEL) and resonant cavity enhanced photodetectors (RCEPD). In traditional MBE, the growth of these devices requires extensive calibrations. Recently, spectroscopic ellipsometry (SE) was shown to be an accurate method for determining the composition and thicknesses of III-V semiconductor layers in situ during growth. This paper reports the growth of AlAs/GaAs/InGaAs RCEPDs using SE control with no a priori calibration curves. The experimentally measured cavity resonance of the reflectivity spectrum and the photoresponse peak of the fabricated photodiode lie within 3 nm of the target design value of 990 nm. These results show that feedback control during MBE allows quicker and more reproducible growth of RCEPDs with precise control of layer thickness and alloy composition than calibration-based control.

Original languageEnglish (US)
Pages (from-to)990-993
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
StatePublished - May 1999
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: Aug 31 1998Sep 4 1998

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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