TY - JOUR
T1 - Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry
AU - Beaudoin, M.
AU - Kelkar, P.
AU - Boonzaayer, M. D.
AU - Braun, W.
AU - Dowd, P.
AU - Johnson, Shane
AU - Koelle, U.
AU - Ryu, C. M.
AU - Zhang, Yong-Hang
N1 - Funding Information:
This work was supported by DARPA programs with contract number MDA972-95-1-0016, managed by G. Pomrenke, and contract number MDA972-97-3-0009, managed by E. Towe.
PY - 1999/5
Y1 - 1999/5
N2 - Precise control of layer thickness and alloy compositions are very critical for the successful growth of vertical cavity surface emitting lasers (VCSEL) and resonant cavity enhanced photodetectors (RCEPD). In traditional MBE, the growth of these devices requires extensive calibrations. Recently, spectroscopic ellipsometry (SE) was shown to be an accurate method for determining the composition and thicknesses of III-V semiconductor layers in situ during growth. This paper reports the growth of AlAs/GaAs/InGaAs RCEPDs using SE control with no a priori calibration curves. The experimentally measured cavity resonance of the reflectivity spectrum and the photoresponse peak of the fabricated photodiode lie within 3 nm of the target design value of 990 nm. These results show that feedback control during MBE allows quicker and more reproducible growth of RCEPDs with precise control of layer thickness and alloy composition than calibration-based control.
AB - Precise control of layer thickness and alloy compositions are very critical for the successful growth of vertical cavity surface emitting lasers (VCSEL) and resonant cavity enhanced photodetectors (RCEPD). In traditional MBE, the growth of these devices requires extensive calibrations. Recently, spectroscopic ellipsometry (SE) was shown to be an accurate method for determining the composition and thicknesses of III-V semiconductor layers in situ during growth. This paper reports the growth of AlAs/GaAs/InGaAs RCEPDs using SE control with no a priori calibration curves. The experimentally measured cavity resonance of the reflectivity spectrum and the photoresponse peak of the fabricated photodiode lie within 3 nm of the target design value of 990 nm. These results show that feedback control during MBE allows quicker and more reproducible growth of RCEPDs with precise control of layer thickness and alloy composition than calibration-based control.
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U2 - 10.1016/S0022-0248(98)01511-5
DO - 10.1016/S0022-0248(98)01511-5
M3 - Conference article
AN - SCOPUS:0032640807
SN - 0022-0248
VL - 201
SP - 990
EP - 993
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -