Growth of linearly ordered arrays of InAs nanocrystals on scratched InP

H. D. Fonseca-Filho, C. M. Almeida, R. Prioli, M. P. Pires, P. L. Souza, Z. H. Wu, Q. Y. Wei, Fernando Ponce

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Linear arrays of InAs nanocrystals have been produced by metalorganic vapor phase epitaxy on scratches performed with an atomic force microscope tip along specific crystallographic directions of an (100) InP wafer. Scratches along 〈 110 〉 generate highly mobile defects that extend far from the scratch region along easy-glide directions. On the other hand, 〈 100 〉 scratches result in highly-localized plastic deformation, hardening, and possibly frictional heating. In both cases, growth of nanocrystals was observed only on the scratched areas. Random nucleation of nanocrystals is observed along 〈 110 〉 scratches, while linearly ordered growth occur along 〈 100 〉 scratches. We attribute these observations to the delocalized nature of the dislocations in the 〈 110 〉 case, giving the appearance of random nucleation, while highly localized crystal defects along the 〈 100 〉 scratch lines act as nucleation sites for the growth of linear arrays of nanocrystals.

Original languageEnglish (US)
Article number054313
JournalJournal of Applied Physics
Issue number5
StatePublished - Mar 26 2010


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Fonseca-Filho, H. D., Almeida, C. M., Prioli, R., Pires, M. P., Souza, P. L., Wu, Z. H., Wei, Q. Y., & Ponce, F. (2010). Growth of linearly ordered arrays of InAs nanocrystals on scratched InP. Journal of Applied Physics, 107(5), [054313].