Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus; Gon Namkoong; Walter Henderson; W. Alan Doolittle; Rong Liu; Jin Mei; Fernando Ponce; Maurice Cheung; Fei Chen; Madalina Furis; Alexander Cartwright

doi:10.1016/j.jcrysgro.2005.02.041

Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus, Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, Jin Mei, Fernando Ponce, Maurice Cheung, Fei Chen, Madalina Furis, Alexander Cartwright

Physics

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)_InN∥(1 1 1)_Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Original language	English (US)
Pages (from-to)	311-315
Number of pages	5
Journal	Journal of Crystal Growth
Volume	279
Issue number	3-4
DOIs	https://doi.org/10.1016/j.jcrysgro.2005.02.041
State	Published - Jun 1 2005

Keywords

A3. Molecular beam epitaxy
B2. Semiconducting germanium
B3. Heterojunction semiconductor devices
B3. Semiconducting III-V materials

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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title = "Growth of InN on Ge substrate by molecular beam epitaxy",

abstract = "InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.",

keywords = "A3. Molecular beam epitaxy, B2. Semiconducting germanium, B3. Heterojunction semiconductor devices, B3. Semiconducting III-V materials",

author = "Elaissa Trybus and Gon Namkoong and Walter Henderson and Doolittle, {W. Alan} and Rong Liu and Jin Mei and Fernando Ponce and Maurice Cheung and Fei Chen and Madalina Furis and Alexander Cartwright",

year = "2005",

month = jun,

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doi = "10.1016/j.jcrysgro.2005.02.041",

language = "English (US)",

volume = "279",

pages = "311--315",

journal = "Journal of Crystal Growth",

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TY - JOUR

T1 - Growth of InN on Ge substrate by molecular beam epitaxy

AU - Trybus, Elaissa

AU - Namkoong, Gon

AU - Henderson, Walter

AU - Doolittle, W. Alan

AU - Liu, Rong

AU - Mei, Jin

AU - Ponce, Fernando

AU - Cheung, Maurice

AU - Chen, Fei

AU - Furis, Madalina

AU - Cartwright, Alexander

PY - 2005/6/1

Y1 - 2005/6/1

N2 - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

AB - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting germanium

KW - B3. Heterojunction semiconductor devices

KW - B3. Semiconducting III-V materials

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U2 - 10.1016/j.jcrysgro.2005.02.041

DO - 10.1016/j.jcrysgro.2005.02.041

M3 - Article

AN - SCOPUS:20844452183

SN - 0022-0248

VL - 279

SP - 311

EP - 315

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4

ER -

Growth of InN on Ge substrate by molecular beam epitaxy

Abstract

Keywords

ASJC Scopus subject areas

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