Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus, Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, Jin Mei, Fernando Ponce, Maurice Cheung, Fei Chen, Madalina Furis, Alexander Cartwright

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Original languageEnglish (US)
Pages (from-to)311-315
Number of pages5
JournalJournal of Crystal Growth
Volume279
Issue number3-4
DOIs
StatePublished - Jun 1 2005

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Germanium
Transmission electron microscopy
transmission electron microscopy
Epilayers
Epitaxial layers
Substrates
Epitaxial growth
wurtzite
germanium
Photoluminescence
Energy gap
photoluminescence
X ray diffraction
energy
diffraction
x rays

Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting germanium
  • B3. Heterojunction semiconductor devices
  • B3. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Trybus, E., Namkoong, G., Henderson, W., Doolittle, W. A., Liu, R., Mei, J., ... Cartwright, A. (2005). Growth of InN on Ge substrate by molecular beam epitaxy. Journal of Crystal Growth, 279(3-4), 311-315. https://doi.org/10.1016/j.jcrysgro.2005.02.041

Growth of InN on Ge substrate by molecular beam epitaxy. / Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander.

In: Journal of Crystal Growth, Vol. 279, No. 3-4, 01.06.2005, p. 311-315.

Research output: Contribution to journalArticle

Trybus, E, Namkoong, G, Henderson, W, Doolittle, WA, Liu, R, Mei, J, Ponce, F, Cheung, M, Chen, F, Furis, M & Cartwright, A 2005, 'Growth of InN on Ge substrate by molecular beam epitaxy', Journal of Crystal Growth, vol. 279, no. 3-4, pp. 311-315. https://doi.org/10.1016/j.jcrysgro.2005.02.041
Trybus E, Namkoong G, Henderson W, Doolittle WA, Liu R, Mei J et al. Growth of InN on Ge substrate by molecular beam epitaxy. Journal of Crystal Growth. 2005 Jun 1;279(3-4):311-315. https://doi.org/10.1016/j.jcrysgro.2005.02.041
Trybus, Elaissa ; Namkoong, Gon ; Henderson, Walter ; Doolittle, W. Alan ; Liu, Rong ; Mei, Jin ; Ponce, Fernando ; Cheung, Maurice ; Chen, Fei ; Furis, Madalina ; Cartwright, Alexander. / Growth of InN on Ge substrate by molecular beam epitaxy. In: Journal of Crystal Growth. 2005 ; Vol. 279, No. 3-4. pp. 311-315.
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AU - Mei, Jin

AU - Ponce, Fernando

AU - Cheung, Maurice

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AB - InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

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