Growth of InN on Ge substrate by molecular beam epitaxy

Elaissa Trybus, Gon Namkoong, Walter Henderson, W. Alan Doolittle, Rong Liu, Jin Mei, Fernando Ponce, Maurice Cheung, Fei Chen, Madalina Furis, Alexander Cartwright

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Abstract

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1)InN∥(1 1 1)Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Original languageEnglish (US)
Pages (from-to)311-315
Number of pages5
JournalJournal of Crystal Growth
Volume279
Issue number3-4
DOIs
StatePublished - Jun 1 2005

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Keywords

  • A3. Molecular beam epitaxy
  • B2. Semiconducting germanium
  • B3. Heterojunction semiconductor devices
  • B3. Semiconducting III-V materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Trybus, E., Namkoong, G., Henderson, W., Doolittle, W. A., Liu, R., Mei, J., Ponce, F., Cheung, M., Chen, F., Furis, M., & Cartwright, A. (2005). Growth of InN on Ge substrate by molecular beam epitaxy. Journal of Crystal Growth, 279(3-4), 311-315. https://doi.org/10.1016/j.jcrysgro.2005.02.041