Growth of InAs quantum dots on GaAsSb for the realization of a quantum dot solar cell

S. P. Bremner, A. Pancholi, K. Ghosh, S. Dahal, G. M. Liu, K. Y. Ban, M. Y. Levy, C. B. Honsberg

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The InAs/GaAsSb quantum dot/barrier material system has been identified as a candidate for implementing the quantum dot (QD) solar cell for an Sb content of ∼ 12%. We present results from the growth of this system on GaAs substrates by Molecular Beam Epitaxy (MBE). The results show that the growth of GaAsSb requires special care in order to ensure the highest quality interface and also to maintain the Sb composition. When InAs QDs are grown on the GaAsSb, the role of strain in determining the properties of the QDs is seen to be profound. Results from PL studies show that the sizes of the QDs are controlled by the GaAsSb layer thickness and hence the residual strain at the GaAsSb surface. In addition a change from type I to type II transitions can be affected by this method. The implications of these results plus the influence of the substrate choice, and so the strain, on the system properties will be discussed in terms of a QD solar cell design with a strain balanced design enabling a much larger active region and hence higher absorption.

Original languageEnglish (US)
Title of host publication33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
DOIs
StatePublished - 2008
Externally publishedYes
Event33rd IEEE Photovoltaic Specialists Conference, PVSC 2008 - San Diego, CA, United States
Duration: May 11 2008May 16 2008

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other33rd IEEE Photovoltaic Specialists Conference, PVSC 2008
Country/TerritoryUnited States
CitySan Diego, CA
Period5/11/085/16/08

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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