Growth of InAs nanostructures on InP using atomic-force nanolithography

Atomic-force nanolithography was used to control the nucleation sites of InAs nanostructures on InP substrates. Indentations with a wide range of dimensions were produced on InP. InAs nanostructures were selectively grown by metal organic vapor phase epitaxy. It is shown that the number of active nucleation sites depends on the normal force applied during nanoindentation. Crystalline defects introduced by nanoindentation are shown to be nucleation sites for these nanostructures. The presence of screw dislocations within the grown nanostructures further supports this observation.