Growth of InAs nanostructures on InP using atomic-force nanolithography

H. D. Fonseca Filho, R. Prioli, M. P. Pires, A. S. Lopes, P. L. Souza, Fernando Ponce

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Atomic-force nanolithography was used to control the nucleation sites of InAs nanostructures on InP substrates. Indentations with a wide range of dimensions were produced on InP. InAs nanostructures were selectively grown by metal organic vapor phase epitaxy. It is shown that the number of active nucleation sites depends on the normal force applied during nanoindentation. Crystalline defects introduced by nanoindentation are shown to be nucleation sites for these nanostructures. The presence of screw dislocations within the grown nanostructures further supports this observation.

Original languageEnglish (US)
Pages (from-to)945-949
Number of pages5
JournalApplied Physics A: Materials Science and Processing
Volume89
Issue number4
DOIs
StatePublished - Dec 2007

Fingerprint

Nanolithography
Nanostructures
nucleation
nanoindentation
Nucleation
Nanoindentation
screw dislocations
indentation
vapor phase epitaxy
Screw dislocations
Vapor phase epitaxy
Indentation
Metals
defects
Crystalline materials
metals
Defects
indium arsenide
Substrates

ASJC Scopus subject areas

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Growth of InAs nanostructures on InP using atomic-force nanolithography. / Fonseca Filho, H. D.; Prioli, R.; Pires, M. P.; Lopes, A. S.; Souza, P. L.; Ponce, Fernando.

In: Applied Physics A: Materials Science and Processing, Vol. 89, No. 4, 12.2007, p. 945-949.

Research output: Contribution to journalArticle

Fonseca Filho, H. D. ; Prioli, R. ; Pires, M. P. ; Lopes, A. S. ; Souza, P. L. ; Ponce, Fernando. / Growth of InAs nanostructures on InP using atomic-force nanolithography. In: Applied Physics A: Materials Science and Processing. 2007 ; Vol. 89, No. 4. pp. 945-949.
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