Abstract

Lattice-matched heterovalent II-VI/III-V semiconductor structures, such as quantum wells and double heterostructures consisting of ZnSe/GaAs and ZnTe/GaSb, are grown using single and dual-chamber molecular beam epitaxy systems by utilizing migration-enhanced epitaxy and a substrate temperature ramp method. Specific elemental overpressures are utilized after each epilayer growth to control the surface termination and to prevent defective III-VI compounds from forming at the heterovalent interfaces. Characterization using x-ray diffraction and transmission electron microscopy confirms sharp interfaces and coherent bonding between the heterovalent materials. Photoluminescence measurements show optical transitions from the heterovalent double heterostructures and quantum wells, as well as evidence for midgap defect states in the III-V layers. The III-V layers have a very low density of structural defects, but some stacking faults are observed in the II-VI layers.

Original languageEnglish (US)
Article number02D110
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number2
DOIs
StatePublished - Mar 1 2018

Fingerprint

Semiconductor quantum wells
Heterojunctions
Defects
Optical transitions
Epilayers
Stacking faults
Epitaxial growth
Molecular beam epitaxy
quantum wells
Crystal lattices
Photoluminescence
overpressure
Diffraction
defects
Transmission electron microscopy
ramps
optical transition
crystal defects
X rays
epitaxy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Growth of II-VI/III-V heterovalent quantum structures. / Lassise, Maxwell B.; Wang, Peng; Tracy, Brian D.; Chen, Guopeng; Smith, David; Zhang, Yong-Hang.

In: Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics, Vol. 36, No. 2, 02D110, 01.03.2018.

Research output: Contribution to journalArticle

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AU - Lassise, Maxwell B.

AU - Wang, Peng

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AU - Chen, Guopeng

AU - Smith, David

AU - Zhang, Yong-Hang

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