Growth of II-VI/III-V heterovalent quantum structures

Maxwell B. Lassise, Peng Wang, Brian D. Tracy, Guopeng Chen, David Smith, Yong-Hang Zhang

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

Lattice-matched heterovalent II-VI/III-V semiconductor structures, such as quantum wells and double heterostructures consisting of ZnSe/GaAs and ZnTe/GaSb, are grown using single and dual-chamber molecular beam epitaxy systems by utilizing migration-enhanced epitaxy and a substrate temperature ramp method. Specific elemental overpressures are utilized after each epilayer growth to control the surface termination and to prevent defective III-VI compounds from forming at the heterovalent interfaces. Characterization using x-ray diffraction and transmission electron microscopy confirms sharp interfaces and coherent bonding between the heterovalent materials. Photoluminescence measurements show optical transitions from the heterovalent double heterostructures and quantum wells, as well as evidence for midgap defect states in the III-V layers. The III-V layers have a very low density of structural defects, but some stacking faults are observed in the II-VI layers.

Original languageEnglish (US)
Article number02D110
JournalJournal of Vacuum Science and Technology B: Nanotechnology and Microelectronics
Volume36
Issue number2
DOIs
StatePublished - Mar 1 2018

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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