Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Yeongho Kim; Nikolai N. Faleev; Keun Yong Ban; Jun Oh Kim; Sang Jun Lee; Christiana Honsberg

doi:10.1088/0022-3727/49/30/305102

Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

Yeongho Kim, Nikolai N. Faleev, Keun Yong Ban, Jun Oh Kim, Sang Jun Lee, Christiana Honsberg

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We investigate the structural and optical properties of InAs quantum dots (QDs) embedded in In_xGa_1-xAs_0.96Sb_0.04 layers with different In content. Indium incorporation from 0 to 9% increases QD areal density up to 9.3 × 10¹⁰ cm^-2 and decreases QD diameter and height by the reduction of the island-island interaction. The elastic strain of the InGaAsSb layers, surrounded by a GaAs matrix, increases with higher In content. Further, the increase of In content from 5 to 9% reduces the density of dislocation loops in the InGaAsSb and GaAs layers almost by half due to improvement of the InAs/InGaAsSb interface quality. The photoluminescence peak from the QDs is redshifted with increasing In content as a result of reduced strain inside the QDs.

Original language	English (US)
Article number	305102
Journal	Journal of Physics D: Applied Physics
Volume	49
Issue number	30
DOIs	https://doi.org/10.1088/0022-3727/49/30/305102
State	Published - Jul 7 2016

Keywords

InAs/InGaAsSb interface
molecular beam epitaxy
quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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10.1088/0022-3727/49/30/305102

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title = "Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well",

abstract = "We investigate the structural and optical properties of InAs quantum dots (QDs) embedded in InxGa1-xAs0.96Sb0.04 layers with different In content. Indium incorporation from 0 to 9% increases QD areal density up to 9.3 × 1010 cm-2 and decreases QD diameter and height by the reduction of the island-island interaction. The elastic strain of the InGaAsSb layers, surrounded by a GaAs matrix, increases with higher In content. Further, the increase of In content from 5 to 9% reduces the density of dislocation loops in the InGaAsSb and GaAs layers almost by half due to improvement of the InAs/InGaAsSb interface quality. The photoluminescence peak from the QDs is redshifted with increasing In content as a result of reduced strain inside the QDs.",

keywords = "InAs/InGaAsSb interface, molecular beam epitaxy, quantum dots",

author = "Yeongho Kim and Faleev, {Nikolai N.} and Ban, {Keun Yong} and Kim, {Jun Oh} and Lee, {Sang Jun} and Christiana Honsberg",

note = "Funding Information: This material is based upon work primarily supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: {\textcopyright} 2016 IOP Publishing Ltd.",

year = "2016",

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doi = "10.1088/0022-3727/49/30/305102",

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T1 - Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

AU - Kim, Yeongho

AU - Faleev, Nikolai N.

AU - Ban, Keun Yong

AU - Kim, Jun Oh

AU - Lee, Sang Jun

AU - Honsberg, Christiana

N1 - Funding Information: This material is based upon work primarily supported by the National Science Foundation (NSF) and the Department of Energy (DOE) under NSF CA No. EEC-1041895. Any opinions, findings and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect those of NSF or DOE. We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University. Publisher Copyright: © 2016 IOP Publishing Ltd.

PY - 2016/7/7

Y1 - 2016/7/7

N2 - We investigate the structural and optical properties of InAs quantum dots (QDs) embedded in InxGa1-xAs0.96Sb0.04 layers with different In content. Indium incorporation from 0 to 9% increases QD areal density up to 9.3 × 1010 cm-2 and decreases QD diameter and height by the reduction of the island-island interaction. The elastic strain of the InGaAsSb layers, surrounded by a GaAs matrix, increases with higher In content. Further, the increase of In content from 5 to 9% reduces the density of dislocation loops in the InGaAsSb and GaAs layers almost by half due to improvement of the InAs/InGaAsSb interface quality. The photoluminescence peak from the QDs is redshifted with increasing In content as a result of reduced strain inside the QDs.

AB - We investigate the structural and optical properties of InAs quantum dots (QDs) embedded in InxGa1-xAs0.96Sb0.04 layers with different In content. Indium incorporation from 0 to 9% increases QD areal density up to 9.3 × 1010 cm-2 and decreases QD diameter and height by the reduction of the island-island interaction. The elastic strain of the InGaAsSb layers, surrounded by a GaAs matrix, increases with higher In content. Further, the increase of In content from 5 to 9% reduces the density of dislocation loops in the InGaAsSb and GaAs layers almost by half due to improvement of the InAs/InGaAsSb interface quality. The photoluminescence peak from the QDs is redshifted with increasing In content as a result of reduced strain inside the QDs.

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Growth of highly dense InAs quantum dots with improved crystal quality embedded in an InGaAsSb quantum well

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