Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat, M. A. Koza, B. J. Skromme

Research output: Contribution to journalArticle

75 Scopus citations

Abstract

In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

Original languageEnglish (US)
Pages (from-to)1194-1196
Number of pages3
JournalApplied Physics Letters
Volume50
Issue number17
DOIs
StatePublished - Dec 1 1987
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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