Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat; M. A. Koza; B. J. Skromme

doi:10.1063/1.97908

Growth of high-quality GaAs using trimethylgallium and diethylarsine

R. Bhat, M. A. Koza, B. J. Skromme

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Abstract

In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×10¹⁴ cm^-3 and a liquid nitrogen temperature mobility as high as 64 600 cm²/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

Original language	English (US)
Pages (from-to)	1194-1196
Number of pages	3
Journal	Applied Physics Letters
Volume	50
Issue number	17
DOIs	https://doi.org/10.1063/1.97908
State	Published - 1987
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of high-quality GaAs using trimethylgallium and diethylarsine",

abstract = "In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.",

author = "R. Bhat and Koza, {M. A.} and Skromme, {B. J.}",

year = "1987",

doi = "10.1063/1.97908",

language = "English (US)",

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journal = "Applied Physics Letters",

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T1 - Growth of high-quality GaAs using trimethylgallium and diethylarsine

AU - Bhat, R.

AU - Koza, M. A.

AU - Skromme, B. J.

PY - 1987

Y1 - 1987

N2 - In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

AB - In this letter we report the growth of high-quality gallium arsenide using trimethylgallium and diethylarsine. The epitaxial layers had excellent morphology, an n-type background free-carrier concentration as low as 3×1014 cm-3 and a liquid nitrogen temperature mobility as high as 64 600 cm2/V s. The low-temperature (2 K) photoluminescence spectrum has well-resolved excitonic peaks, confirming the high quality of the material.

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U2 - 10.1063/1.97908

DO - 10.1063/1.97908

M3 - Article

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Growth of high-quality GaAs using trimethylgallium and diethylarsine

Abstract

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