Growth of high quality CdTe on Si substrates by molecular beam epitaxy

L. A. Almeida, Y. P. Chen, J. P. Faurie, S. Sivananthan, David J. Smith, S. C Y Tsen

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We have systematically studied the growth of CdTe (111)B on Si(001)with different atomic step structures, defined uniquely by miscut tilt angle and direction. X-ray double crystal rocking curve (DCRC) analysis has been used to evaluate the crystalline quality and twin content of the films. High-resolution electron microscopy has been used to examine the CdTe(111)B/Si(001) interface and to follow the microstructural evolution as a function of distance from the interface. Our results show that the formation of double domains and twins is very sensitive to the tilt parameters. When growth conditions are optimized, twins are not observed at distances greater than about 2.5 microns from the substrate surface. The best quality films exhibit a DCRC FWHM of 60 arc sec, for a film thickness of 17 μm, the lowest value ever reported for heteroepitaxial growth of CdTe on Si or GaAs. In efforts to improve the nucleation process, precursors such as Te and As have been used, and we have shown that they improve the stability of the heterointerface.

Original languageEnglish (US)
Pages (from-to)1402-1405
Number of pages4
JournalJournal of Electronic Materials
Volume25
Issue number8
StatePublished - Aug 1996

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Crystals
High resolution electron microscopy
Microstructural evolution
Substrates
Full width at half maximum
Epitaxial growth
Film thickness
Nucleation
curves
Crystalline materials
X rays
crystals
electron microscopy
film thickness
arcs
nucleation
high resolution
x rays

Keywords

  • CdTe
  • Defects
  • Heteroepitaxy
  • HgCdTe
  • Molecular beam epitaxy
  • Si substrate

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Materials Science(all)
  • Electronic, Optical and Magnetic Materials
  • Physics and Astronomy (miscellaneous)

Cite this

Almeida, L. A., Chen, Y. P., Faurie, J. P., Sivananthan, S., Smith, D. J., & Tsen, S. C. Y. (1996). Growth of high quality CdTe on Si substrates by molecular beam epitaxy. Journal of Electronic Materials, 25(8), 1402-1405.

Growth of high quality CdTe on Si substrates by molecular beam epitaxy. / Almeida, L. A.; Chen, Y. P.; Faurie, J. P.; Sivananthan, S.; Smith, David J.; Tsen, S. C Y.

In: Journal of Electronic Materials, Vol. 25, No. 8, 08.1996, p. 1402-1405.

Research output: Contribution to journalArticle

Almeida, LA, Chen, YP, Faurie, JP, Sivananthan, S, Smith, DJ & Tsen, SCY 1996, 'Growth of high quality CdTe on Si substrates by molecular beam epitaxy', Journal of Electronic Materials, vol. 25, no. 8, pp. 1402-1405.
Almeida LA, Chen YP, Faurie JP, Sivananthan S, Smith DJ, Tsen SCY. Growth of high quality CdTe on Si substrates by molecular beam epitaxy. Journal of Electronic Materials. 1996 Aug;25(8):1402-1405.
Almeida, L. A. ; Chen, Y. P. ; Faurie, J. P. ; Sivananthan, S. ; Smith, David J. ; Tsen, S. C Y. / Growth of high quality CdTe on Si substrates by molecular beam epitaxy. In: Journal of Electronic Materials. 1996 ; Vol. 25, No. 8. pp. 1402-1405.
@article{2b5563a1b0ec420a9bfc9b2a1c80d930,
title = "Growth of high quality CdTe on Si substrates by molecular beam epitaxy",
abstract = "We have systematically studied the growth of CdTe (111)B on Si(001)with different atomic step structures, defined uniquely by miscut tilt angle and direction. X-ray double crystal rocking curve (DCRC) analysis has been used to evaluate the crystalline quality and twin content of the films. High-resolution electron microscopy has been used to examine the CdTe(111)B/Si(001) interface and to follow the microstructural evolution as a function of distance from the interface. Our results show that the formation of double domains and twins is very sensitive to the tilt parameters. When growth conditions are optimized, twins are not observed at distances greater than about 2.5 microns from the substrate surface. The best quality films exhibit a DCRC FWHM of 60 arc sec, for a film thickness of 17 μm, the lowest value ever reported for heteroepitaxial growth of CdTe on Si or GaAs. In efforts to improve the nucleation process, precursors such as Te and As have been used, and we have shown that they improve the stability of the heterointerface.",
keywords = "CdTe, Defects, Heteroepitaxy, HgCdTe, Molecular beam epitaxy, Si substrate",
author = "Almeida, {L. A.} and Chen, {Y. P.} and Faurie, {J. P.} and S. Sivananthan and Smith, {David J.} and Tsen, {S. C Y}",
year = "1996",
month = "8",
language = "English (US)",
volume = "25",
pages = "1402--1405",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "8",

}

TY - JOUR

T1 - Growth of high quality CdTe on Si substrates by molecular beam epitaxy

AU - Almeida, L. A.

AU - Chen, Y. P.

AU - Faurie, J. P.

AU - Sivananthan, S.

AU - Smith, David J.

AU - Tsen, S. C Y

PY - 1996/8

Y1 - 1996/8

N2 - We have systematically studied the growth of CdTe (111)B on Si(001)with different atomic step structures, defined uniquely by miscut tilt angle and direction. X-ray double crystal rocking curve (DCRC) analysis has been used to evaluate the crystalline quality and twin content of the films. High-resolution electron microscopy has been used to examine the CdTe(111)B/Si(001) interface and to follow the microstructural evolution as a function of distance from the interface. Our results show that the formation of double domains and twins is very sensitive to the tilt parameters. When growth conditions are optimized, twins are not observed at distances greater than about 2.5 microns from the substrate surface. The best quality films exhibit a DCRC FWHM of 60 arc sec, for a film thickness of 17 μm, the lowest value ever reported for heteroepitaxial growth of CdTe on Si or GaAs. In efforts to improve the nucleation process, precursors such as Te and As have been used, and we have shown that they improve the stability of the heterointerface.

AB - We have systematically studied the growth of CdTe (111)B on Si(001)with different atomic step structures, defined uniquely by miscut tilt angle and direction. X-ray double crystal rocking curve (DCRC) analysis has been used to evaluate the crystalline quality and twin content of the films. High-resolution electron microscopy has been used to examine the CdTe(111)B/Si(001) interface and to follow the microstructural evolution as a function of distance from the interface. Our results show that the formation of double domains and twins is very sensitive to the tilt parameters. When growth conditions are optimized, twins are not observed at distances greater than about 2.5 microns from the substrate surface. The best quality films exhibit a DCRC FWHM of 60 arc sec, for a film thickness of 17 μm, the lowest value ever reported for heteroepitaxial growth of CdTe on Si or GaAs. In efforts to improve the nucleation process, precursors such as Te and As have been used, and we have shown that they improve the stability of the heterointerface.

KW - CdTe

KW - Defects

KW - Heteroepitaxy

KW - HgCdTe

KW - Molecular beam epitaxy

KW - Si substrate

UR - http://www.scopus.com/inward/record.url?scp=0000982131&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000982131&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000982131

VL - 25

SP - 1402

EP - 1405

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 8

ER -