Growth of high quality CdTe on Si substrates by molecular beam epitaxy

L. A. Almeida, Y. P. Chen, J. P. Faurie, S. Sivananthan, David J. Smith, S. C Y Tsen

Research output: Contribution to journalArticlepeer-review

27 Scopus citations

Abstract

We have systematically studied the growth of CdTe (111)B on Si(001)with different atomic step structures, defined uniquely by miscut tilt angle and direction. X-ray double crystal rocking curve (DCRC) analysis has been used to evaluate the crystalline quality and twin content of the films. High-resolution electron microscopy has been used to examine the CdTe(111)B/Si(001) interface and to follow the microstructural evolution as a function of distance from the interface. Our results show that the formation of double domains and twins is very sensitive to the tilt parameters. When growth conditions are optimized, twins are not observed at distances greater than about 2.5 microns from the substrate surface. The best quality films exhibit a DCRC FWHM of 60 arc sec, for a film thickness of 17 μm, the lowest value ever reported for heteroepitaxial growth of CdTe on Si or GaAs. In efforts to improve the nucleation process, precursors such as Te and As have been used, and we have shown that they improve the stability of the heterointerface.

Original languageEnglish (US)
Pages (from-to)1402-1405
Number of pages4
JournalJournal of Electronic Materials
Volume25
Issue number8
DOIs
StatePublished - Aug 1996

Keywords

  • CdTe
  • Defects
  • Heteroepitaxy
  • HgCdTe
  • Molecular beam epitaxy
  • Si substrate

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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