We report heteroepitaxial growth of diamond-structured Si 1-x-yGexCy alloys on (100)Si substrates. Introduction of C into the diamond lattice is kinetically favored by low-temperature (470°C) interactions of C(SiH3)4, a novel C-H free carbon precursor, with mixtures of SiH4 and GeH 4 using ultrahigh-vacuum chemical vapor deposition techniques. Film thicknesses of 100 to 110 nm with 4-6 at. % C as indicated by Rutherford backscattering carbon resonance spectroscopy were obtained. Cross-sectional transmission electron microscopy and Fourier transform infrared spectroscopy showed crystalline alloy phase formation with no detectable SiC precipitation. Secondary ion mass spectrometry revealed pure and highly homogeneous films. In situ annealing at 675°C resulted in heteroepitaxial films with relatively few defects.
|Original language||English (US)|
|Number of pages||1|
|Journal||Applied Physics Letters|
|State||Published - 1995|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)