Growth of heteroepitaxial Si1-x-yGexCy alloys on silicon using novel deposition chemistry

Michael Todd; Philip Matsunaga; John Kouvetakis; D. Chandrasekhar; David Smith

doi:10.1063/1.114386

Growth of heteroepitaxial Si_1-x-yGe_xC_y alloys on silicon using novel deposition chemistry

Michael Todd, Philip Matsunaga, John Kouvetakis, D. Chandrasekhar, David Smith

Research output: Contribution to journal › Article › peer-review

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Abstract

We report heteroepitaxial growth of diamond-structured Si _1-x-yGe_xC_y alloys on (100)Si substrates. Introduction of C into the diamond lattice is kinetically favored by low-temperature (470°C) interactions of C(SiH₃)₄, a novel C-H free carbon precursor, with mixtures of SiH₄ and GeH ₄ using ultrahigh-vacuum chemical vapor deposition techniques. Film thicknesses of 100 to 110 nm with 4-6 at. % C as indicated by Rutherford backscattering carbon resonance spectroscopy were obtained. Cross-sectional transmission electron microscopy and Fourier transform infrared spectroscopy showed crystalline alloy phase formation with no detectable SiC precipitation. Secondary ion mass spectrometry revealed pure and highly homogeneous films. In situ annealing at 675°C resulted in heteroepitaxial films with relatively few defects.

Original language	English (US)
Pages (from-to)	1247
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114386
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth of heteroepitaxial Si1-x-yGexCy alloys on silicon using novel deposition chemistry",

abstract = "We report heteroepitaxial growth of diamond-structured Si 1-x-yGexCy alloys on (100)Si substrates. Introduction of C into the diamond lattice is kinetically favored by low-temperature (470°C) interactions of C(SiH3)4, a novel C-H free carbon precursor, with mixtures of SiH4 and GeH 4 using ultrahigh-vacuum chemical vapor deposition techniques. Film thicknesses of 100 to 110 nm with 4-6 at. % C as indicated by Rutherford backscattering carbon resonance spectroscopy were obtained. Cross-sectional transmission electron microscopy and Fourier transform infrared spectroscopy showed crystalline alloy phase formation with no detectable SiC precipitation. Secondary ion mass spectrometry revealed pure and highly homogeneous films. In situ annealing at 675°C resulted in heteroepitaxial films with relatively few defects.",

author = "Michael Todd and Philip Matsunaga and John Kouvetakis and D. Chandrasekhar and David Smith",

year = "1995",

doi = "10.1063/1.114386",

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volume = "67",

pages = "1247",

journal = "Applied Physics Letters",

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T1 - Growth of heteroepitaxial Si1-x-yGexCy alloys on silicon using novel deposition chemistry

AU - Todd, Michael

AU - Matsunaga, Philip

AU - Kouvetakis, John

AU - Chandrasekhar, D.

AU - Smith, David

PY - 1995

Y1 - 1995

N2 - We report heteroepitaxial growth of diamond-structured Si 1-x-yGexCy alloys on (100)Si substrates. Introduction of C into the diamond lattice is kinetically favored by low-temperature (470°C) interactions of C(SiH3)4, a novel C-H free carbon precursor, with mixtures of SiH4 and GeH 4 using ultrahigh-vacuum chemical vapor deposition techniques. Film thicknesses of 100 to 110 nm with 4-6 at. % C as indicated by Rutherford backscattering carbon resonance spectroscopy were obtained. Cross-sectional transmission electron microscopy and Fourier transform infrared spectroscopy showed crystalline alloy phase formation with no detectable SiC precipitation. Secondary ion mass spectrometry revealed pure and highly homogeneous films. In situ annealing at 675°C resulted in heteroepitaxial films with relatively few defects.

AB - We report heteroepitaxial growth of diamond-structured Si 1-x-yGexCy alloys on (100)Si substrates. Introduction of C into the diamond lattice is kinetically favored by low-temperature (470°C) interactions of C(SiH3)4, a novel C-H free carbon precursor, with mixtures of SiH4 and GeH 4 using ultrahigh-vacuum chemical vapor deposition techniques. Film thicknesses of 100 to 110 nm with 4-6 at. % C as indicated by Rutherford backscattering carbon resonance spectroscopy were obtained. Cross-sectional transmission electron microscopy and Fourier transform infrared spectroscopy showed crystalline alloy phase formation with no detectable SiC precipitation. Secondary ion mass spectrometry revealed pure and highly homogeneous films. In situ annealing at 675°C resulted in heteroepitaxial films with relatively few defects.

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ER -

Growth of heteroepitaxial Si_1-x-yGe_xC_y alloys on silicon using novel deposition chemistry

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