Growth of GaN on ZrB                         2                          substrate by metal-organic vapor phase epitaxy

Yoshihito Tomida; Shugo Nitta; Satoshi Kamiyama; Hiroshi Amano; Isamu Akasaki; Shigeki Otani; Hiroyuki Kinoshita; Rong Liu; Abigail Bell; Fernando Ponce

doi:10.1016/S0169-4332(03)00466-5

Growth of GaN on ZrB ₂ substrate by metal-organic vapor phase epitaxy

Yoshihito Tomida, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Shigeki Otani, Hiroyuki Kinoshita, Rong Liu, Abigail Bell, Fernando Ponce

Physics

Research output: Contribution to journal › Article › peer-review

30 Scopus citations

Abstract

Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB ₂ ) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrB _x N _1-x is formed on the surface when ZrB ₂ is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB ₂ surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 10 ⁸ cm ^-2 . Direct conduction was achieved through the back of ZrB ₂ and the surface of Si-doped GaN.

Original language	English (US)
Pages (from-to)	502-507
Number of pages	6
Journal	Applied Surface Science
Volume	216
Issue number	1-4 SPEC.
DOIs	https://doi.org/10.1016/S0169-4332(03)00466-5
State	Published - Jun 30 2003

Keywords

GaN
MOVPE
New substrate
Nitridation
ZrB

ASJC Scopus subject areas

General Chemistry
Condensed Matter Physics
General Physics and Astronomy
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/S0169-4332(03)00466-5

Cite this

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., Kinoshita, H., Liu, R., Bell, A., & Ponce, F. (2003). Growth of GaN on ZrB ₂ substrate by metal-organic vapor phase epitaxy Applied Surface Science, 216(1-4 SPEC.), 502-507. https://doi.org/10.1016/S0169-4332(03)00466-5

Growth of GaN on ZrB ₂ substrate by metal-organic vapor phase epitaxy . / Tomida, Yoshihito; Nitta, Shugo; Kamiyama, Satoshi et al.
In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 502-507.

Research output: Contribution to journal › Article › peer-review

Tomida, Y, Nitta, S, Kamiyama, S, Amano, H, Akasaki, I, Otani, S, Kinoshita, H, Liu, R, Bell, A & Ponce, F 2003, ' Growth of GaN on ZrB ₂ substrate by metal-organic vapor phase epitaxy ', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 502-507. https://doi.org/10.1016/S0169-4332(03)00466-5

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title = " Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy ",

abstract = " Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB 2 ) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrB x N 1-x is formed on the surface when ZrB 2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB 2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 10 8 cm -2 . Direct conduction was achieved through the back of ZrB 2 and the surface of Si-doped GaN.",

keywords = "GaN, MOVPE, New substrate, Nitridation, ZrB",

author = "Yoshihito Tomida and Shugo Nitta and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Shigeki Otani and Hiroyuki Kinoshita and Rong Liu and Abigail Bell and Fernando Ponce",

note = "Funding Information: This study was partially supported by the NEDO International Joint Research Program and the Akasaki Research Center, Nagoya University.",

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doi = "10.1016/S0169-4332(03)00466-5",

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T1 - Growth of GaN on ZrB 2 substrate by metal-organic vapor phase epitaxy

AU - Tomida, Yoshihito

AU - Nitta, Shugo

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Otani, Shigeki

AU - Kinoshita, Hiroyuki

AU - Liu, Rong

AU - Bell, Abigail

AU - Ponce, Fernando

N1 - Funding Information: This study was partially supported by the NEDO International Joint Research Program and the Akasaki Research Center, Nagoya University.

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB 2 ) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrB x N 1-x is formed on the surface when ZrB 2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB 2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 10 8 cm -2 . Direct conduction was achieved through the back of ZrB 2 and the surface of Si-doped GaN.

AB - Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB 2 ) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrB x N 1-x is formed on the surface when ZrB 2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB 2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 10 8 cm -2 . Direct conduction was achieved through the back of ZrB 2 and the surface of Si-doped GaN.

KW - GaN

KW - MOVPE

KW - New substrate

KW - Nitridation

KW - ZrB

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