Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

Yoshihito Tomida, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki, Shigeki Otani, Hiroyuki Kinoshita, Rong Liu, Abigail Bell, Fernando Ponce

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB2) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrBxN1-x is formed on the surface when ZrB2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 108cm-2. Direct conduction was achieved through the back of ZrB2 and the surface of Si-doped GaN.

Original languageEnglish (US)
Pages (from-to)502-507
Number of pages6
JournalApplied Surface Science
Volume216
Issue number1-4 SPEC.
DOIs
StatePublished - Jun 30 2003

Fingerprint

Vapor phase epitaxy
vapor phase epitaxy
Metals
Substrates
metals
Ammonia
Zirconium
ammonia
coverings
Nucleation
nucleation
Transmission electron microscopy
conduction
atmospheres
transmission electron microscopy
Temperature

Keywords

  • GaN
  • MOVPE
  • New substrate
  • Nitridation
  • ZrB

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Tomida, Y., Nitta, S., Kamiyama, S., Amano, H., Akasaki, I., Otani, S., ... Ponce, F. (2003). Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. Applied Surface Science, 216(1-4 SPEC.), 502-507. https://doi.org/10.1016/S0169-4332(03)00466-5

Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. / Tomida, Yoshihito; Nitta, Shugo; Kamiyama, Satoshi; Amano, Hiroshi; Akasaki, Isamu; Otani, Shigeki; Kinoshita, Hiroyuki; Liu, Rong; Bell, Abigail; Ponce, Fernando.

In: Applied Surface Science, Vol. 216, No. 1-4 SPEC., 30.06.2003, p. 502-507.

Research output: Contribution to journalArticle

Tomida, Y, Nitta, S, Kamiyama, S, Amano, H, Akasaki, I, Otani, S, Kinoshita, H, Liu, R, Bell, A & Ponce, F 2003, 'Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy', Applied Surface Science, vol. 216, no. 1-4 SPEC., pp. 502-507. https://doi.org/10.1016/S0169-4332(03)00466-5
Tomida Y, Nitta S, Kamiyama S, Amano H, Akasaki I, Otani S et al. Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. Applied Surface Science. 2003 Jun 30;216(1-4 SPEC.):502-507. https://doi.org/10.1016/S0169-4332(03)00466-5
Tomida, Yoshihito ; Nitta, Shugo ; Kamiyama, Satoshi ; Amano, Hiroshi ; Akasaki, Isamu ; Otani, Shigeki ; Kinoshita, Hiroyuki ; Liu, Rong ; Bell, Abigail ; Ponce, Fernando. / Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy. In: Applied Surface Science. 2003 ; Vol. 216, No. 1-4 SPEC. pp. 502-507.
@article{2ba39ffdef2d4df982d7548b37a2530d,
title = "Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy",
abstract = "Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB2) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrBxN1-x is formed on the surface when ZrB2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 108cm-2. Direct conduction was achieved through the back of ZrB2 and the surface of Si-doped GaN.",
keywords = "GaN, MOVPE, New substrate, Nitridation, ZrB",
author = "Yoshihito Tomida and Shugo Nitta and Satoshi Kamiyama and Hiroshi Amano and Isamu Akasaki and Shigeki Otani and Hiroyuki Kinoshita and Rong Liu and Abigail Bell and Fernando Ponce",
year = "2003",
month = "6",
day = "30",
doi = "10.1016/S0169-4332(03)00466-5",
language = "English (US)",
volume = "216",
pages = "502--507",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",
number = "1-4 SPEC.",

}

TY - JOUR

T1 - Growth of GaN on ZrB2 substrate by metal-organic vapor phase epitaxy

AU - Tomida, Yoshihito

AU - Nitta, Shugo

AU - Kamiyama, Satoshi

AU - Amano, Hiroshi

AU - Akasaki, Isamu

AU - Otani, Shigeki

AU - Kinoshita, Hiroyuki

AU - Liu, Rong

AU - Bell, Abigail

AU - Ponce, Fernando

PY - 2003/6/30

Y1 - 2003/6/30

N2 - Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB2) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrBxN1-x is formed on the surface when ZrB2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 108cm-2. Direct conduction was achieved through the back of ZrB2 and the surface of Si-doped GaN.

AB - Growth of GaN by metal-organic vapor phase epitaxy (MOVPE) on metallic zirconium diboride (ZrB2) substrate was investigated. Cross-sectional transmission electron microscopy (TEM) showed that cubic ZrBxN1-x is formed on the surface when ZrB2 is exposed to ammonia-containing atmosphere, which protects the nucleation of GaN or AlN. We solved the problem by covering ZrB2 surface with very thin AlN or GaN at low temperature, thereby achieving high-quality GaN growth with a dislocation density less than 108cm-2. Direct conduction was achieved through the back of ZrB2 and the surface of Si-doped GaN.

KW - GaN

KW - MOVPE

KW - New substrate

KW - Nitridation

KW - ZrB

UR - http://www.scopus.com/inward/record.url?scp=0038408801&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0038408801&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(03)00466-5

DO - 10.1016/S0169-4332(03)00466-5

M3 - Article

VL - 216

SP - 502

EP - 507

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - 1-4 SPEC.

ER -