Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

John Kouvetakis; Jeffrey McMurran; David B. Beach; David Smith

Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

John Kouvetakis, Jeffrey McMurran, David B. Beach, David Smith

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl ₂GaN ₃ and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70-500 angstrom per minute, the low deposition temperature of 550-700°C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Publisher	Materials Research Society
Pages	79-84
Number of pages	6
Volume	395
State	Published - 1996
Event	Proceedings of the 1995 MRS Fall Meeting - Boston, MA, USA Duration: Nov 26 1995 → Dec 1 1995

Other

Other	Proceedings of the 1995 MRS Fall Meeting
City	Boston, MA, USA
Period	11/26/95 → 12/1/95

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

@inproceedings{c53cb74fbde84fc5b43fabf506f76f49,

title = "Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor",

abstract = "We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl 2GaN 3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70-500 angstrom per minute, the low deposition temperature of 550-700°C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes. ",

author = "John Kouvetakis and Jeffrey McMurran and Beach, {David B.} and David Smith",

year = "1996",

language = "English (US)",

volume = "395",

pages = "79--84",

booktitle = "Materials Research Society Symposium - Proceedings",

publisher = "Materials Research Society",

note = "Proceedings of the 1995 MRS Fall Meeting ; Conference date: 26-11-1995 Through 01-12-1995",

}

TY - GEN

T1 - Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

AU - Kouvetakis, John

AU - McMurran, Jeffrey

AU - Beach, David B.

AU - Smith, David

PY - 1996

Y1 - 1996

N2 - We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl 2GaN 3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70-500 angstrom per minute, the low deposition temperature of 550-700°C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

AB - We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl 2GaN 3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70-500 angstrom per minute, the low deposition temperature of 550-700°C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

UR - http://www.scopus.com/inward/record.url?scp=0029726175&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029726175&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0029726175

VL - 395

SP - 79

EP - 84

BT - Materials Research Society Symposium - Proceedings

PB - Materials Research Society

T2 - Proceedings of the 1995 MRS Fall Meeting

Y2 - 26 November 1995 through 1 December 1995

ER -

Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

Abstract

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