Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor

John Kouvetakis, Jeffrey McMurran, David B. Beach, David Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

We have demonstrated growth of crystalline GaN on Si substrates by using, for the first time, a novel inorganic precursor Cl 2GaN 3 and ultra-high-vacuum chemical vapor deposition techniques. Cross-sectional electron microscopy of the highly conformal films showed columnar growth of wurtzite GaN while Auger and RBS oxygen- and carbon-resonance spectroscopies showed that the films were pure and highly homogeneous. In addition to the high growth rates of 70-500 angstrom per minute, the low deposition temperature of 550-700°C, and the nearly perfect GaN stoichiometry that we obtain, another notable advantage of our method is that it provides a carbon-free growth environment which is compatible with p-doping processes.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Pages79-84
Number of pages6
Volume395
StatePublished - 1996
EventProceedings of the 1995 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 26 1995Dec 1 1995

Other

OtherProceedings of the 1995 MRS Fall Meeting
CityBoston, MA, USA
Period11/26/9512/1/95

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Kouvetakis, J., McMurran, J., Beach, D. B., & Smith, D. (1996). Growth of GaN on (100)Si using a new C-H and N-H free single-source precursor. In Materials Research Society Symposium - Proceedings (Vol. 395, pp. 79-84). Materials Research Society.