Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy

Ok Hyun Nam, Michael D. Bremser, Brandon L. Ward, Robert Nemanich, Robert F. Davis

Research output: Contribution to journalArticle

119 Citations (Scopus)

Abstract

The selective growth of GaN and Al0.2Ga0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. NO ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes ≥5 μm wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.

Original languageEnglish (US)
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume36
Issue number5 A
StatePublished - May 1 1997
Externally publishedYes

Fingerprint

Vapor phase epitaxy
Organometallics
vapor phase epitaxy
pyramids
Substrates
Field emission
ridges
field emission
flat surfaces
Anodes
Multilayers
anodes
flow velocity
Flow rate

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy. / Nam, Ok Hyun; Bremser, Michael D.; Ward, Brandon L.; Nemanich, Robert; Davis, Robert F.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 36, No. 5 A, 01.05.1997.

Research output: Contribution to journalArticle

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AU - Nemanich, Robert

AU - Davis, Robert F.

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