Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy

Ok Hyun Nam; Michael D. Bremser; Brandon L. Ward; Robert J. Nemanich; Robert F. Davis

doi:10.1143/jjap.36.l532

Growth of GaN and Al_0.2Ga_0.8N on patterned substrates via organometallic vapor phase epitaxy

Ok Hyun Nam, Michael D. Bremser, Brandon L. Ward, Robert J. Nemanich, Robert F. Davis

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Abstract

The selective growth of GaN and Al_0.2Ga_0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. NO ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes ≥5 μm wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.

Original language	English (US)
Pages (from-to)	L532-L535
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	36
Issue number	5 A
DOIs	https://doi.org/10.1143/jjap.36.l532
State	Published - 1997
Externally published	Yes

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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@article{bd0c415ea3194b529873650e71d39926,

title = "Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy",

abstract = "The selective growth of GaN and Al0.2Ga0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. NO ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes ≥5 μm wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.",

author = "Nam, {Ok Hyun} and Bremser, {Michael D.} and Ward, {Brandon L.} and Nemanich, {Robert J.} and Davis, {Robert F.}",

year = "1997",

doi = "10.1143/jjap.36.l532",

language = "English (US)",

volume = "36",

pages = "L532--L535",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "5 A",

}

TY - JOUR

T1 - Growth of GaN and Al0.2Ga0.8N on patterned substrates via organometallic vapor phase epitaxy

AU - Nam, Ok Hyun

AU - Bremser, Michael D.

AU - Ward, Brandon L.

AU - Nemanich, Robert J.

AU - Davis, Robert F.

PY - 1997

Y1 - 1997

N2 - The selective growth of GaN and Al0.2Ga0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. NO ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes ≥5 μm wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.

AB - The selective growth of GaN and Al0.2Ga0.8N has been achieved on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of triethylgallium. NO ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes ≥5 μm wide. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V/μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.

UR - http://www.scopus.com/inward/record.url?scp=0031142401&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031142401&partnerID=8YFLogxK

U2 - 10.1143/jjap.36.l532

DO - 10.1143/jjap.36.l532

M3 - Article

AN - SCOPUS:0031142401

SN - 0021-4922

VL - 36

SP - L532-L535

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 5 A

ER -

Growth of GaN and Al_0.2Ga_0.8N on patterned substrates via organometallic vapor phase epitaxy

Abstract

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