Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

R. Garcia, A. C. Thomas, Fernando Ponce

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.

Original languageEnglish (US)
Pages (from-to)3131-3134
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number12
DOIs
StatePublished - Jun 1 2008

Fingerprint

Thick films
thick films
Luminescent devices
Ammonium Chloride
ammonium chlorides
Quartz
Gallium
Fused silica
Alloying
Ammonia
Gold
wurtzite
Optoelectronic devices
alloying
gallium
reagents
Luminescence
ammonia
Chemical vapor deposition
quartz

Keywords

  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure. / Garcia, R.; Thomas, A. C.; Ponce, Fernando.

In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 3131-3134.

Research output: Contribution to journalArticle

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