Abstract
Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 3131-3134 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 310 |
| Issue number | 12 |
| DOIs | |
| State | Published - Jun 1 2008 |
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Keywords
- B1. Gallium compounds
- B1. Nitrides
- B2. Semiconducting gallium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure. / Garcia, R.; Thomas, A. C.; Ponce, Fernando.
In: Journal of Crystal Growth, Vol. 310, No. 12, 01.06.2008, p. 3131-3134.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure
AU - Garcia, R.
AU - Thomas, A. C.
AU - Ponce, Fernando
PY - 2008/6/1
Y1 - 2008/6/1
N2 - Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.
AB - Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.
KW - B1. Gallium compounds
KW - B1. Nitrides
KW - B2. Semiconducting gallium compounds
UR - http://www.scopus.com/inward/record.url?scp=44149111815&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=44149111815&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.03.030
DO - 10.1016/j.jcrysgro.2008.03.030
M3 - Article
AN - SCOPUS:44149111815
VL - 310
SP - 3131
EP - 3134
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 12
ER -