Abstract
Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.
Original language | English (US) |
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Pages (from-to) | 3131-3134 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 310 |
Issue number | 12 |
DOIs | |
State | Published - Jun 1 2008 |
Keywords
- B1. Gallium compounds
- B1. Nitrides
- B2. Semiconducting gallium compounds
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry