Growth of free-standing highly luminescent undoped and Mg-doped GaN thick films with a columnar structure

R. Garcia, A. C. Thomas, Fernando Ponce

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

Undoped and Mg-doped GaN thick films with a columnar structure have been grown on gold-covered fused silica substrates in a three-zone horizontal quartz-tube reactor. The undoped films were grown by a two-step chemical vapor deposition method using gallium and ammonium chloride as starting reagents and ammonia as carrier gas. The Mg-doped films were deposited by the same method, but with an initial Ga-Mg alloying step. These GaN thick films have a wurtzite structure and exhibit strong room-temperature luminescence with the characteristic GaN band-edge, and the Mg-related emissions for the doped films. Their optoelectronic properties are comparable to GaN films grown epitaxially with other more elaborate techniques. This growth technique can be used for inexpensive, large-area electroluminescent devices.

Original languageEnglish (US)
Pages (from-to)3131-3134
Number of pages4
JournalJournal of Crystal Growth
Volume310
Issue number12
DOIs
StatePublished - Jun 1 2008

Keywords

  • B1. Gallium compounds
  • B1. Nitrides
  • B2. Semiconducting gallium compounds

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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