Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy: Interface structure, electronic and magnetic properties

S. Tari, R. Sporken, T. Aoki, David Smith, V. Metlushko, K. AbuEl-Rub, S. Sivananthan

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.

Original languageEnglish (US)
Pages (from-to)1586-1591
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 1 2002
EventProceedings of the 29th Conference on the Physics and Chemistry of Semiconductor Interfaces - Santa Fe, NM, United States
Duration: Jan 6 2002Jan 10 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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