Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy

Interface structure, electronic and magnetic properties

S. Tari, R. Sporken, T. Aoki, David Smith, V. Metlushko, K. AbuEl-Rub, S. Sivananthan

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Thin, single crystal, epitaxial bcc Fe(001) films were grown on Ge(001) surfaces at 150°C. Fe film growth and interface structure were monitored by RHEED. Fe thin film formation was determined by XPS and HRTEM.

Original languageEnglish (US)
Pages (from-to)1586-1591
Number of pages6
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number4
DOIs
StatePublished - Jul 2002

Fingerprint

Reflection high energy electron diffraction
Film growth
Molecular beam epitaxy
Electronic properties
Heterojunctions
Magnetic properties
molecular beam epitaxy
X ray photoelectron spectroscopy
Single crystals
magnetic properties
Thin films
electronics
single crystals
thin films

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Growth of Fe/Ge(001) heterostructures by molecular beam epitaxy : Interface structure, electronic and magnetic properties. / Tari, S.; Sporken, R.; Aoki, T.; Smith, David; Metlushko, V.; AbuEl-Rub, K.; Sivananthan, S.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 4, 07.2002, p. 1586-1591.

Research output: Contribution to journalArticle

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AU - Metlushko, V.

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AU - Sivananthan, S.

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