Abstract
Pyrite (FeS2), a semiconductor composed of inexpensive, non-toxic elements, has a band gap of ∼0.95 eV and an absorption coefficient higher than conventional direct band gap semiconductors, including GaAs. These facts have inspired the use of pyrite as a potential candidate for terawatt-scale photovoltaic systems. However, there has been limited progress synthesizing thin films of sufficient quality to produce efficient solar cells. Here we describe the layer-by-layer growth of stoichiometric, single-phase pyrite thin films on heated substrates using sequential evaporation of Fe under high vacuum followed by sulfidation at pressures ranging from 1 mTorr to 1 Torr. High-resolution transmission electron microscopy reveals high-quality, defect-free pyrite grains. We demonstrate that epitaxial pyrite layers can be deposited with this method on natural pyrite substrates.
Original language | English (US) |
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Pages (from-to) | 7392-7398 |
Number of pages | 7 |
Journal | Acta Materialia |
Volume | 61 |
Issue number | 19 |
DOIs | |
State | Published - Nov 2013 |
Keywords
- Epitaxy
- Layer-by-layer growth
- Pyrite
- Thermochemistry
- Thin films
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Polymers and Plastics
- Metals and Alloys