Growth of epitaxial CoSi2 on SiGe(001)

B. I. Boyanov; P. T. Goeller; D. E. Sayers; R. J. Nemanich

doi:10.1063/1.370894

Growth of epitaxial CoSi₂ on SiGe(001)

B. I. Boyanov, P. T. Goeller, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The effect of germanium on the growth of epitaxial CoSi₂ films on SiGe(001) and the stability of the CoSi₂-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi₂ films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (221̄)-oriented islanded films or significant pitting of the silicide layer.

Original language	English (US)
Pages (from-to)	1355-1362
Number of pages	8
Journal	Journal of Applied Physics
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.370894
State	Published - Aug 1999
Externally published	Yes

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.370894

Cite this

@article{7a880317786d473c9be14cce66045f32,

title = "Growth of epitaxial CoSi2 on SiGe(001)",

abstract = "The effect of germanium on the growth of epitaxial CoSi2 films on SiGe(001) and the stability of the CoSi2-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi2 films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (22{\=1})-oriented islanded films or significant pitting of the silicide layer.",

author = "Boyanov, {B. I.} and Goeller, {P. T.} and Sayers, {D. E.} and Nemanich, {R. J.}",

year = "1999",

month = aug,

doi = "10.1063/1.370894",

language = "English (US)",

volume = "86",

pages = "1355--1362",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Growth of epitaxial CoSi2 on SiGe(001)

AU - Boyanov, B. I.

AU - Goeller, P. T.

AU - Sayers, D. E.

AU - Nemanich, R. J.

PY - 1999/8

Y1 - 1999/8

N2 - The effect of germanium on the growth of epitaxial CoSi2 films on SiGe(001) and the stability of the CoSi2-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi2 films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (221̄)-oriented islanded films or significant pitting of the silicide layer.

AB - The effect of germanium on the growth of epitaxial CoSi2 films on SiGe(001) and the stability of the CoSi2-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi2 films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (221̄)-oriented islanded films or significant pitting of the silicide layer.

UR - http://www.scopus.com/inward/record.url?scp=0032613719&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032613719&partnerID=8YFLogxK

U2 - 10.1063/1.370894

DO - 10.1063/1.370894

M3 - Article

AN - SCOPUS:0032613719

SN - 0021-8979

VL - 86

SP - 1355

EP - 1362

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

ER -

Growth of epitaxial CoSi₂ on SiGe(001)

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this