Growth of epitaxial CoSi2 on SiGe(001)

B. I. Boyanov, P. T. Goeller, D. E. Sayers, R. J. Nemanich

Research output: Contribution to journalArticle

15 Scopus citations

Abstract

The effect of germanium on the growth of epitaxial CoSi2 films on SiGe(001) and the stability of the CoSi2-SiGe interface was investigated. The highest quality (001) oriented film were grown with a layered template structure consisting of 2 ML Si/1 ML Co/2ML Si deposited at room temperature on the SiGe(001) surface. The surface roughness of the films after annealing at 700 °C was comparable to Si(001) substrate. Attempts to deposit (001)-oriented CoSi2 films at Co-rich stoichiometry, either directly on the surface of SiGe(001) or on a layered template, resulted in growth of (221̄)-oriented islanded films or significant pitting of the silicide layer.

Original languageEnglish (US)
Pages (from-to)1355-1362
Number of pages8
JournalJournal of Applied Physics
Volume86
Issue number3
DOIs
StatePublished - Aug 1999
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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