TY - GEN
T1 - Growth of Cu(In,Ga)(S,Se)2 films
T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017
AU - West, Bradley
AU - Stuckelberger, Michael
AU - Chen, Lei
AU - Lovelett, Robert
AU - Lai, Barry
AU - Maser, Jorg
AU - Shafarman, William
AU - Bertoni, Mariana
N1 - Funding Information:
The authors would like to acknowledge the excellent work done by Rupak Chakraborty, Jim Serdy, and Tonio Buonassisi, at MIT for the design and production of the in-situ temperature stage. Bradley West is supported by an IGERT-SUN fellowship funded by the National Science Foundation (Award 1144616). We acknowledge funding from the U.S. Department of Energy under contract DE-EE0005848. Work at the Advanced Photon Source was supported by the U.S. Department of Energy, Office of Science, Office of Basic Energy Sciences, under Contract No. DE-AC02-06CH11357.
Publisher Copyright:
© 2017 IEEE.
PY - 2017
Y1 - 2017
N2 - In-situ investigations of Cu(In,Ga)(S,Se)2 (CIGS) absorber layers during growth have the potential to provide insight into the origin behind elemental segregation and defect formation at grain boundaries and in grain cores. Our study focuses on CIGS films grown by an industrially relevant precursor reaction process. An in-situ stage developed for these synchrotron studies is used to image the growth of CIGS layers with nanoscale resolution. Utilizing synchrotron based x-ray fluorescence, we are able to rapidly monitor changes in elemental distribution and particle diffusion, with better than 200 nm spatial resolution throughout the 25 minute process. In this work, we highlight some challenges associated with this type of measurements and discuss solutions identified to overcome them.
AB - In-situ investigations of Cu(In,Ga)(S,Se)2 (CIGS) absorber layers during growth have the potential to provide insight into the origin behind elemental segregation and defect formation at grain boundaries and in grain cores. Our study focuses on CIGS films grown by an industrially relevant precursor reaction process. An in-situ stage developed for these synchrotron studies is used to image the growth of CIGS layers with nanoscale resolution. Utilizing synchrotron based x-ray fluorescence, we are able to rapidly monitor changes in elemental distribution and particle diffusion, with better than 200 nm spatial resolution throughout the 25 minute process. In this work, we highlight some challenges associated with this type of measurements and discuss solutions identified to overcome them.
KW - CIGS
KW - Growth
KW - In-situ
KW - Synchrotron
KW - XRF
UR - http://www.scopus.com/inward/record.url?scp=85048491082&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048491082&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2017.8366049
DO - 10.1109/PVSC.2017.8366049
M3 - Conference contribution
AN - SCOPUS:85048491082
T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
SP - 70
EP - 74
BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
PB - Institute of Electrical and Electronics Engineers Inc.
Y2 - 25 June 2017 through 30 June 2017
ER -