Abstract
Single crystals of AlN to 1 mm thickness were grown in the range 1950-2250°C on 10 × 10 mm 2 α(6H) - SiC(0001) substrates via sublimation-recondensation method. Hot pressed polycrystalline AIN was used as the source material. The color varied from transparent to dark green/blue. The crystal morphology varied with growth conditions. Most crystals were 0.3 mm -1 mm thick transparent layers which completely covered the substrates. Raman, optical and transmission electron microscopy (TEM) results are presented. Single crystals of gallium nitride (GaN) were also grown by subliming powders of this material under an ammonia (NH 3) flow. Optical microscopy, Raman and photoluminescence results are shown.
| Original language | English (US) |
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| Title of host publication | Materials Research Society Symposium - Proceedings |
| Editors | F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar |
| Publisher | Materials Research Society |
| Pages | 41-46 |
| Number of pages | 6 |
| Volume | 449 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
| Other | Proceedings of the 1996 MRS Fall Symposium |
|---|---|
| City | Boston, MA, USA |
| Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials