Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

V. M. Torres, M. Stevens, J. L. Edwards, David Smith, R. B. Doak, I. S T Tsong

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Abstract

We have grown AIN and GaN layers on 4° off-axis 6H-SiC (0001) substrates using He supersonic beams seeded with NH3. The AIN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2 ×1010 cm-2.

Original languageEnglish (US)
Pages (from-to)1365-1367
Number of pages3
JournalApplied Physics Letters
Volume71
Issue number10
DOIs
StatePublished - Sep 8 1997

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Torres, V. M., Stevens, M., Edwards, J. L., Smith, D., Doak, R. B., & Tsong, I. S. T. (1997). Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia. Applied Physics Letters, 71(10), 1365-1367. https://doi.org/10.1063/1.119895