Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

V. M. Torres; M. Stevens; J. L. Edwards; David Smith; R. B. Doak; I. S T Tsong

doi:10.1063/1.119895

Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

V. M. Torres, M. Stevens, J. L. Edwards, David Smith, R. B. Doak, I. S T Tsong

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

We have grown AIN and GaN layers on 4° off-axis 6H-SiC (0001) substrates using He supersonic beams seeded with NH₃. The AIN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH₃ molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2 ×10¹⁰ cm^-2.

Original language	English (US)
Pages (from-to)	1365-1367
Number of pages	3
Journal	Applied Physics Letters
Volume	71
Issue number	10
DOIs	https://doi.org/10.1063/1.119895
State	Published - Sep 8 1997

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.119895

Cite this

@article{f39b3364196f45e4a5a5e72971f108a6,

title = "Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia",

abstract = "We have grown AIN and GaN layers on 4° off-axis 6H-SiC (0001) substrates using He supersonic beams seeded with NH3. The AIN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2 ×1010 cm-2.",

author = "Torres, {V. M.} and M. Stevens and Edwards, {J. L.} and David Smith and Doak, {R. B.} and Tsong, {I. S T}",

year = "1997",

month = sep,

day = "8",

doi = "10.1063/1.119895",

language = "English (US)",

volume = "71",

pages = "1365--1367",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

AU - Torres, V. M.

AU - Stevens, M.

AU - Edwards, J. L.

AU - Smith, David

AU - Doak, R. B.

AU - Tsong, I. S T

PY - 1997/9/8

Y1 - 1997/9/8

N2 - We have grown AIN and GaN layers on 4° off-axis 6H-SiC (0001) substrates using He supersonic beams seeded with NH3. The AIN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2 ×1010 cm-2.

AB - We have grown AIN and GaN layers on 4° off-axis 6H-SiC (0001) substrates using He supersonic beams seeded with NH3. The AIN films were used as buffer layers for GaN growth at 800°C. We estimate 39% incorporation of the NH3 molecules impinging on the substrate surface during GaN film growth. High structural quality of the epitaxial GaN layers was confirmed by transmission electron microscopy and electron channeling patterns. The GaN films, which had a thickness of ∼105 nm, contained a defect density of ∼2 ×1010 cm-2.

UR - http://www.scopus.com/inward/record.url?scp=0000434926&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000434926&partnerID=8YFLogxK

U2 - 10.1063/1.119895

DO - 10.1063/1.119895

M3 - Article

AN - SCOPUS:0000434926

SN - 0003-6951

VL - 71

SP - 1365

EP - 1367

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Growth of AIN and GaN on 6H-SiC(0001) using a helium supersonic beam seeded with ammonia

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this