Growth kinetics and reaction mechanism of silicon chemical vapour deposition from silane

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In this paper the kinetics of silicon chemical vapour deposition from silane are studied. The growth rate of a gas-solid deposition reaction is derived on the basis of collision theory of heterogeneous unimolecular elementary reaction and classical statistical physics. A set of homogeneous and heterogeneous reaction mechanisms is suggested for silane deposition. This model can explain many experimental phenomena including low and atmospheric pressure, hydrogen and inert ambient, amorphous, polycrystalline and single-crystal silane deposition. The limitation of the previous kinetic models of silicon chemical vapour deposition is also discussed.

Original languageEnglish (US)
Pages (from-to)201-211
Number of pages11
JournalThin Solid Films
Volume223
Issue number2
DOIs
StatePublished - Feb 15 1993
Externally publishedYes

Fingerprint

Silanes
Growth kinetics
Silicon
silanes
Chemical vapor deposition
vapor deposition
kinetics
silicon
Atmospheric pressure
Hydrogen
atmospheric pressure
Physics
low pressure
Gases
Single crystals
physics
collisions
single crystals
hydrogen
gases

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Growth kinetics and reaction mechanism of silicon chemical vapour deposition from silane. / Tao, Meng.

In: Thin Solid Films, Vol. 223, No. 2, 15.02.1993, p. 201-211.

Research output: Contribution to journalArticle

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