Abstract
In this paper the kinetics of silicon chemical vapour deposition from silane are studied. The growth rate of a gas-solid deposition reaction is derived on the basis of collision theory of heterogeneous unimolecular elementary reaction and classical statistical physics. A set of homogeneous and heterogeneous reaction mechanisms is suggested for silane deposition. This model can explain many experimental phenomena including low and atmospheric pressure, hydrogen and inert ambient, amorphous, polycrystalline and single-crystal silane deposition. The limitation of the previous kinetic models of silicon chemical vapour deposition is also discussed.
Original language | English (US) |
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Pages (from-to) | 201-211 |
Number of pages | 11 |
Journal | Thin Solid Films |
Volume | 223 |
Issue number | 2 |
DOIs | |
State | Published - Feb 15 1993 |
Externally published | Yes |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry