Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy

Peter Bennett, B. Ashcroft, Zhian He, R. M. Tromp

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.

Original languageEnglish (US)
Pages (from-to)2500-2504
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
StatePublished - Nov 2002

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Epitaxial growth
epitaxy
Electron microscopy
Nanowires
electron microscopy
nanowires
titanium
Titanium
Kinetics
kinetics
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy. / Bennett, Peter; Ashcroft, B.; He, Zhian; Tromp, R. M.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 20, No. 6, 11.2002, p. 2500-2504.

Research output: Contribution to journalArticle

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