Growth dynamics of titanium silicide nanowires observed with low-energy electron microscopy

Peter Bennett, B. Ashcroft, Zhian He, R. M. Tromp

Research output: Contribution to journalArticle

29 Scopus citations

Abstract

Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.

Original languageEnglish (US)
Pages (from-to)2500-2504
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume20
Issue number6
DOIs
StatePublished - Nov 1 2002

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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