Abstract
Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.
Original language | English (US) |
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Pages (from-to) | 2500-2504 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 20 |
Issue number | 6 |
DOIs | |
State | Published - Nov 1 2002 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering