Spontaneous nanowire (NW) formation in the Ti/Si(111) system was followed and found to occur during reactive epitaxy at T∼850°C. Dynamic observations show that the rate-limiting kinetic step during both growth and shrinking of the NWs is the silicide reaction at the island ends.
|Original language||English (US)|
|Number of pages||5|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|State||Published - Nov 1 2002|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering