Abstract
We have correlated luminescence studies of epitaxially laterally overgrown GaN with microstructure and local carrier concentration measurements. We have found that the luminescence characteristics of the coherently grown regions are considerably different from those of the sidewall facets. We find that these differences are related to the growth-front and not the dislocation density. The differences appears to be due to a variation in the incorporation of Ga vacancies for different facets. The ELO GaN (ELOG) structures were grown using metalorganic chemical vapor deposition, with a parallel stripe pattern of SiO2 mask along (1100) direction.
Original language | English (US) |
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Title of host publication | IEEE International Symposium on Compound Semiconductors, Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 35-36 |
Number of pages | 2 |
Volume | 2003-January |
ISBN (Print) | 0780378202 |
DOIs | |
State | Published - 2003 |
Event | 2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States Duration: Aug 25 2003 → Aug 27 2003 |
Other
Other | 2003 International Symposium on Compound Semiconductors, ISCS 2003 |
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Country/Territory | United States |
City | San Diego |
Period | 8/25/03 → 8/27/03 |
Keywords
- Astronomy
- Carrier confinement
- Chemical vapor deposition
- Gallium nitride
- Luminescence
- Microstructure
- Physics
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials