Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN

S. Srinivasan, L. Geng, L. Shi, Fernando Ponce, F. Bertram, J. Christen, Y. Narukawa, S. Tanaka

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have correlated luminescence studies of epitaxially laterally overgrown GaN with microstructure and local carrier concentration measurements. We have found that the luminescence characteristics of the coherently grown regions are considerably different from those of the sidewall facets. We find that these differences are related to the growth-front and not the dislocation density. The differences appears to be due to a variation in the incorporation of Ga vacancies for different facets. The ELO GaN (ELOG) structures were grown using metalorganic chemical vapor deposition, with a parallel stripe pattern of SiO2 mask along (1100) direction.

Original languageEnglish (US)
Title of host publicationIEEE International Symposium on Compound Semiconductors, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages35-36
Number of pages2
Volume2003-January
ISBN (Print)0780378202
DOIs
StatePublished - 2003
Event2003 International Symposium on Compound Semiconductors, ISCS 2003 - San Diego, United States
Duration: Aug 25 2003Aug 27 2003

Other

Other2003 International Symposium on Compound Semiconductors, ISCS 2003
CountryUnited States
CitySan Diego
Period8/25/038/27/03

Keywords

  • Astronomy
  • Carrier confinement
  • Chemical vapor deposition
  • Gallium nitride
  • Luminescence
  • Microstructure
  • Physics

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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    Srinivasan, S., Geng, L., Shi, L., Ponce, F., Bertram, F., Christen, J., Narukawa, Y., & Tanaka, S. (2003). Growth-direction dependence of optical properties in epitaxially laterally overgrown GaN. In IEEE International Symposium on Compound Semiconductors, Proceedings (Vol. 2003-January, pp. 35-36). [1239893] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISCS.2003.1239893