Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

E. Dimakis, A. Yu Nikiforov, C. Thomidis, L. Zhou, David Smith, J. Abell, C. K. Kao, T. D. Moustakas

Research output: Contribution to journalArticle

60 Scopus citations

Abstract

Near-ultraviolet light emitting diodes (LED 8), based on one monolayer thick InN/GaN multiple quantum wells, were grown by radio-frequency plasma-assisted molecular beam epitaxy. The active region was grown at 685 °C, a temperature where the growth of thick InN layers is not possible. High resolution transmission electron microscopy revealed that the InN well layers were grown pseudomorphically in between the GaN barriers and were characterized by well defined interfaces and uniform thickness. The LED structures exhibited electroluminescence emission at 384 nm, with a FWHM of about 14 nm. The peak emission wavelength was independent of the injection current, indicating the absence of quantum confined Stark effect in these structures. Output optical power of 0.84 mW was measured at 200 mA in a bare die configuration.

Original languageEnglish (US)
Pages (from-to)1070-1073
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number5
DOIs
StatePublished - May 1 2008

    Fingerprint

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this