Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy

Richard Beeler, Change Weng, John Tolle, Radek Roucka, Jay Mathews, David A. Ahmari, Jose Menendez, John Kouvetakis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we report the epitaxial integration of InGaAs films on Ge/Si(100) virtual substrates for photonic applications. Ge buffer layers with thicknesses of 400-700 nm were grown directly on vicinal (5° miscut) and on-axis Si (100) wafers using a new low-temperature, chemistry-based approach that allows unprecedented control of film microstructure, morphology and purity at CMOS-compatible conditions. In0.01Ga0.49As 0.50 films lattice matched to Ge and with thicknesses in the range of 800-2500 nm were then deposited on both Ge/Si substrates and bulk Ge wafers using industrial MOCVD. All materials were characterized by high-resolution X-ray diffraction, atomic force microscopy, transmission electron microscopy, time-resolved and steady-state photoluminescence, as well as cathodoluminescence. It is found that the properties of the InGaAs/Ge/Si(100) samples are comparable with those grown directly on bulk Ge platforms. Most importantly the films grown on miscut Ge templates are devoid of deleterious antiphase boundaries, making them promising candidates for large scale production of III-V photovoltaics.

Original languageEnglish (US)
Title of host publicationECS Transactions
Pages941-950
Number of pages10
Volume33
Edition6
DOIs
StatePublished - 2010
Event4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting - Las Vegas, NV, United States
Duration: Oct 10 2010Oct 15 2010

Other

Other4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/15/10

Fingerprint

Optical properties
Substrates
Cathodoluminescence
Metallorganic chemical vapor deposition
Buffer layers
Photonics
Atomic force microscopy
Photoluminescence
Transmission electron microscopy
X ray diffraction
Microstructure
Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Beeler, R., Weng, C., Tolle, J., Roucka, R., Mathews, J., Ahmari, D. A., ... Kouvetakis, J. (2010). Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy. In ECS Transactions (6 ed., Vol. 33, pp. 941-950) https://doi.org/10.1149/1.3487626

Growth and optical properties of InGaAs via Ge-based virtual substrates : A new chemistry based strategy. / Beeler, Richard; Weng, Change; Tolle, John; Roucka, Radek; Mathews, Jay; Ahmari, David A.; Menendez, Jose; Kouvetakis, John.

ECS Transactions. Vol. 33 6. ed. 2010. p. 941-950.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Beeler, R, Weng, C, Tolle, J, Roucka, R, Mathews, J, Ahmari, DA, Menendez, J & Kouvetakis, J 2010, Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy. in ECS Transactions. 6 edn, vol. 33, pp. 941-950, 4th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 218th ECS Meeting, Las Vegas, NV, United States, 10/10/10. https://doi.org/10.1149/1.3487626
Beeler R, Weng C, Tolle J, Roucka R, Mathews J, Ahmari DA et al. Growth and optical properties of InGaAs via Ge-based virtual substrates: A new chemistry based strategy. In ECS Transactions. 6 ed. Vol. 33. 2010. p. 941-950 https://doi.org/10.1149/1.3487626
Beeler, Richard ; Weng, Change ; Tolle, John ; Roucka, Radek ; Mathews, Jay ; Ahmari, David A. ; Menendez, Jose ; Kouvetakis, John. / Growth and optical properties of InGaAs via Ge-based virtual substrates : A new chemistry based strategy. ECS Transactions. Vol. 33 6. ed. 2010. pp. 941-950
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