Growth and optical properties of epitaxial GaN films on Si(1 1 1) using single gas-source molecular beam epitaxy

Chemical Compounds

• Molecular Beam Epitaxy 66%
• Optical Property 33%
• Nanopillar 33%
• Epitaxial Film 32%
• Luminiscence Type 32%
• Cathodoluminescence 30%
• Decomposition 29%
• Emission Peak 24%
• Byproduct 22%
• Photoluminescence Spectrum 22%
• Vapor Pressure 22%
• Liquid Film 22%
• Mass Transfer 19%
• Cubic Space Group 19%
• Hexagonal Space Group 18%
• Microstructure 15%
• Buffer Solution 14%
• Nitrogen 13%
• Ambient Reaction Temperature 12%
• Reaction Yield 9%
• Surface 7%

Engineering & Materials Science

• Gas source molecular beam epitaxy 100%
• Epitaxial films 70%
• Optical properties 57%
• Molecular beam epitaxy 35%
• Luminescence 33%
• Cathodoluminescence 21%
• Nanopillars 19%
• Photoluminescence 18%
• Temperature 18%
• Decomposition 16%
• Buffer layers 16%
• Vapor pressure 14%
• Surface morphology 12%
• Crystalline materials 12%
• Byproducts 11%
• Nitrogen 10%
• Mass transfer 10%
• Substrates 8%
• Microstructure 7%
• Chemical analysis 7%

Physics & Astronomy

• molecular beam epitaxy 39%
• optical properties 29%
• gases 23%
• elimination 22%
• luminescence 17%
• decomposition 17%
• cathodoluminescence 12%
• vapor pressure 11%
• wurtzite 11%
• buffers 9%
• nitrogen 8%
• photoluminescence 8%
• microstructure 6%
• room temperature 6%
• temperature 3%