Growth and nanostructure of conformai ruthenium films by liquid-source metalorganic chemical vapor deposition

Sandwip Dey; J. Goswami; A. Das; W. Cao; M. Floyd; Ray Carpenter

doi:10.1063/1.1576513

Growth and nanostructure of conformai ruthenium films by liquid-source metalorganic chemical vapor deposition

Sandwip Dey, J. Goswami, A. Das, W. Cao, M. Floyd, Ray Carpenter

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

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Abstract

The growth and nanostructure of conformal ruthenium films were studied using liquid-source metallorganic chemical vapor deposition. The deposition of Ru films was carried out on various substrates at a temperature of 250-320°C via the oxygen-assisted pyrolysis. The Ru films exhibited dense and polycrystalline grain structure, with a moderate preference for the (001) orientation.

Original language	English (US)
Pages (from-to)	774-777
Number of pages	4
Journal	Journal of Applied Physics
Volume	94
Issue number	1
DOIs	https://doi.org/10.1063/1.1576513
State	Published - Jul 1 2003

ASJC Scopus subject areas

Physics and Astronomy(all)

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abstract = "The growth and nanostructure of conformal ruthenium films were studied using liquid-source metallorganic chemical vapor deposition. The deposition of Ru films was carried out on various substrates at a temperature of 250-320°C via the oxygen-assisted pyrolysis. The Ru films exhibited dense and polycrystalline grain structure, with a moderate preference for the (001) orientation.",

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AU - Cao, W.

AU - Floyd, M.

AU - Carpenter, Ray

PY - 2003/7/1

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AB - The growth and nanostructure of conformal ruthenium films were studied using liquid-source metallorganic chemical vapor deposition. The deposition of Ru films was carried out on various substrates at a temperature of 250-320°C via the oxygen-assisted pyrolysis. The Ru films exhibited dense and polycrystalline grain structure, with a moderate preference for the (001) orientation.

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Growth and nanostructure of conformai ruthenium films by liquid-source metalorganic chemical vapor deposition

Abstract

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