Abstract

This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.

Original languageEnglish (US)
Title of host publication2012 Symposium on Photonics and Optoelectronics, SOPO 2012
DOIs
StatePublished - 2012
Event2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China
Duration: May 21 2012May 23 2012

Other

Other2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
CountryChina
CityShanghai
Period5/21/125/23/12

Fingerprint

High resolution electron microscopy
Molecular beam epitaxy
Optoelectronic devices
Heterojunctions
Structural properties
Materials properties
Photoluminescence
Optical properties
X ray diffraction
Substrates

Keywords

  • 6.1 Å compound semiconductors
  • Electron microscopy
  • Infrared devices
  • Molecular beam epitaxy
  • Photoluminescence
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Liu, X., Furdyna, J. K., Fan, J., Ouyang, L., Smith, D., Ding, D., & Zhang, Y-H. (2012). Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications. In 2012 Symposium on Photonics and Optoelectronics, SOPO 2012 [6271134] https://doi.org/10.1109/SOPO.2012.6271134

Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications. / Liu, Xinyu; Furdyna, Jacek K.; Fan, Jin; Ouyang, Lu; Smith, David; Ding, Ding; Zhang, Yong-Hang.

2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. 6271134.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Liu, X, Furdyna, JK, Fan, J, Ouyang, L, Smith, D, Ding, D & Zhang, Y-H 2012, Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications. in 2012 Symposium on Photonics and Optoelectronics, SOPO 2012., 6271134, 2012 International Symposium on Photonics and Optoelectronics, SOPO 2012, Shanghai, China, 5/21/12. https://doi.org/10.1109/SOPO.2012.6271134
Liu X, Furdyna JK, Fan J, Ouyang L, Smith D, Ding D et al. Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications. In 2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012. 6271134 https://doi.org/10.1109/SOPO.2012.6271134
Liu, Xinyu ; Furdyna, Jacek K. ; Fan, Jin ; Ouyang, Lu ; Smith, David ; Ding, Ding ; Zhang, Yong-Hang. / Growth and material properties of ZnTe/GaSb heterostructures for optoelectronic device applications. 2012 Symposium on Photonics and Optoelectronics, SOPO 2012. 2012.
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