Abstract

This paper reports the growth of ZnTe/GaSbheterostructures on GaSb (001) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties. Ellipsometryand photoluminescence (PL) are used to characterize the optical properties.

Original languageEnglish (US)
Title of host publication2012 Symposium on Photonics and Optoelectronics, SOPO 2012
DOIs
StatePublished - Oct 22 2012
Event2012 International Symposium on Photonics and Optoelectronics, SOPO 2012 - Shanghai, China
Duration: May 21 2012May 23 2012

Publication series

Name2012 Symposium on Photonics and Optoelectronics, SOPO 2012

Other

Other2012 International Symposium on Photonics and Optoelectronics, SOPO 2012
CountryChina
CityShanghai
Period5/21/125/23/12

Keywords

  • 6.1 Å compound semiconductors
  • Electron microscopy
  • Infrared devices
  • Molecular beam epitaxy
  • Photoluminescence
  • X-ray diffraction

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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