Abstract

Thick ZnTe grown on IIIV substrates is proposed as a low-cost virtual substrate for electronic and optoelectronic device applications based on 6.1 Å compound semiconductors. This paper reports the growth of ZnTe samples on GaAs, InP, InAs and GaSb (0 0 1) substrates using molecular beam epitaxy (MBE). X-ray diffraction (XRD) and high-resolution electron microscopy (HREM) are used to characterize the structural properties, and photoluminescence (PL) is used to characterize the optical properties. XRD analysis indicates there are residual tensile strains in ZnTe epilayers due to the difference in thermal expansion coefficients between the ZnTe epilayers and the different substrate materials. HREM images reveal the presence of Lomer edge and 60°partial dislocations at the interfaces between ZnTe epilayers and GaAs and InP substrates. Visible photoluminescence from ZnTe epilayers is observed from 80 to 300 K.

Original languageEnglish (US)
Pages (from-to)127-131
Number of pages5
JournalJournal of Crystal Growth
Volume323
Issue number1
DOIs
StatePublished - May 15 2011

Keywords

  • Infrared devices
  • Molecular beam epitaxy
  • Semiconducting IIVI materials
  • X-ray diffraction

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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