Growth and characterization of ZnO thin films on GaN epilayers

T. P. Smith; H. A. McLean; David J. Smith; P. Q. Miraglia; A. M. Roskowski; R. F. Davis

doi:10.1007/s11664-004-0249-9

Growth and characterization of ZnO thin films on GaN epilayers

T. P. Smith, H. A. McLean, David J. Smith, P. Q. Miraglia, A. M. Roskowski, R. F. Davis

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O₂ were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

Original language	English (US)
Pages (from-to)	826-832
Number of pages	7
Journal	Journal of Electronic Materials
Volume	33
Issue number	7
DOIs	https://doi.org/10.1007/s11664-004-0249-9
State	Published - Jul 2004
Externally published	Yes

Keywords

Interfacial oxide
Metalorganic vapor phase epitaxy
Stacking faults
Thermal expansion
Thin film
Threading dislocations
Transmission electron microscopy
Zinc oxide (ZnO)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0249-9

Cite this

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title = "Growth and characterization of ZnO thin films on GaN epilayers",

abstract = "Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.",

keywords = "Interfacial oxide, Metalorganic vapor phase epitaxy, Stacking faults, Thermal expansion, Thin film, Threading dislocations, Transmission electron microscopy, Zinc oxide (ZnO)",

author = "Smith, {T. P.} and McLean, {H. A.} and Smith, {David J.} and Miraglia, {P. Q.} and Roskowski, {A. M.} and Davis, {R. F.}",

year = "2004",

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doi = "10.1007/s11664-004-0249-9",

language = "English (US)",

volume = "33",

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journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Growth and characterization of ZnO thin films on GaN epilayers

AU - Smith, T. P.

AU - McLean, H. A.

AU - Smith, David J.

AU - Miraglia, P. Q.

AU - Roskowski, A. M.

AU - Davis, R. F.

PY - 2004/7

Y1 - 2004/7

N2 - Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

AB - Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

KW - Interfacial oxide

KW - Metalorganic vapor phase epitaxy

KW - Stacking faults

KW - Thermal expansion

KW - Thin film

KW - Threading dislocations

KW - Transmission electron microscopy

KW - Zinc oxide (ZnO)

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DO - 10.1007/s11664-004-0249-9

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EP - 832

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 7

ER -

Growth and characterization of ZnO thin films on GaN epilayers

Abstract

Keywords

ASJC Scopus subject areas

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