Growth and characterization of ZnO thin films on GaN epilayers

T. P. Smith, H. A. McLean, David Smith, P. Q. Miraglia, A. M. Roskowski, R. F. Davis

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Dense ZnO(0001) films formed at 500°C via coalescence of islands grown via metalorganic vapor phase epitaxy (MOVPE) either on GaN/AlN/SiC(0001) substrates or on initial, coherent ZnO layers. Conical crystallites formed due to thermal expansion-induced stresses between the ZnO and the substrate. Interfaces between the ZnO films on GaN epilayers exposed either simultaneously to diethylzinc and oxygen or only to diethylzinc at the initiation of growth were sharp and epitaxial. Interfaces formed after the exposure of the GaN to O 2 were less coherent, though an interfacial oxide was not observed by cross-sectional transmission electron microscopy (TEM). Threading dislocations and stacking faults were observed in all films.

Original languageEnglish (US)
Pages (from-to)826-832
Number of pages7
JournalJournal of Electronic Materials
Volume33
Issue number7
StatePublished - Jul 2004
Externally publishedYes

Fingerprint

Epilayers
Thin films
thin films
Metallorganic vapor phase epitaxy
Stacking faults
Substrates
Coalescence
Dislocations (crystals)
Crystallites
vapor phase epitaxy
crystal defects
Oxides
coalescing
crystallites
Thermal expansion
thermal expansion
Oxygen
Transmission electron microscopy
transmission electron microscopy
oxides

Keywords

  • Interfacial oxide
  • Metalorganic vapor phase epitaxy
  • Stacking faults
  • Thermal expansion
  • Thin film
  • Threading dislocations
  • Transmission electron microscopy
  • Zinc oxide (ZnO)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Smith, T. P., McLean, H. A., Smith, D., Miraglia, P. Q., Roskowski, A. M., & Davis, R. F. (2004). Growth and characterization of ZnO thin films on GaN epilayers. Journal of Electronic Materials, 33(7), 826-832.

Growth and characterization of ZnO thin films on GaN epilayers. / Smith, T. P.; McLean, H. A.; Smith, David; Miraglia, P. Q.; Roskowski, A. M.; Davis, R. F.

In: Journal of Electronic Materials, Vol. 33, No. 7, 07.2004, p. 826-832.

Research output: Contribution to journalArticle

Smith, TP, McLean, HA, Smith, D, Miraglia, PQ, Roskowski, AM & Davis, RF 2004, 'Growth and characterization of ZnO thin films on GaN epilayers', Journal of Electronic Materials, vol. 33, no. 7, pp. 826-832.
Smith TP, McLean HA, Smith D, Miraglia PQ, Roskowski AM, Davis RF. Growth and characterization of ZnO thin films on GaN epilayers. Journal of Electronic Materials. 2004 Jul;33(7):826-832.
Smith, T. P. ; McLean, H. A. ; Smith, David ; Miraglia, P. Q. ; Roskowski, A. M. ; Davis, R. F. / Growth and characterization of ZnO thin films on GaN epilayers. In: Journal of Electronic Materials. 2004 ; Vol. 33, No. 7. pp. 826-832.
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