Initial results pertaining to the growth and characterization of TiSi2 films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi2 films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi2 have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi2 films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi2 films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi2 films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of ∼0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi2 contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.
- High-temperature rectifying contacts
- Raman spectroscopy scanning
- Semiconducting diamond
- Titanium silicide I diamond interface
- Tunneling microscopy
ASJC Scopus subject areas
- Physics and Astronomy(all)