Growth and characterization of titanium silicide films on natural diamond c(001) substrates

Trevor P. Humphreys; John V. Labrasca; Kevin F. Turner; Robert J. Nemanich; Kalyankumar Das; John B. Posthill; John D. Hunn; Nalin R. Parikh

doi:10.1143/JJAP.31.2369

Growth and characterization of titanium silicide films on natural diamond c(001) substrates

Trevor P. Humphreys, John V. Labrasca, Kevin F. Turner, Robert J. Nemanich, Kalyankumar Das, John B. Posthill, John D. Hunn, Nalin R. Parikh

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Initial results pertaining to the growth and characterization of TiSi₂ films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi₂ films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi₂ have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi₂ films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi₂ films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi₂ films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of ∼0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi₂ contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

Original language	English (US)
Pages (from-to)	2369-2373
Number of pages	5
Journal	Japanese Journal of Applied Physics
Volume	31
Issue number	8 R
DOIs	https://doi.org/10.1143/JJAP.31.2369
State	Published - Aug 1992
Externally published	Yes

Keywords

High-temperature rectifying contacts
Raman spectroscopy scanning
Semiconducting diamond
Titanium silicide I diamond interface
Tunneling microscopy

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

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10.1143/JJAP.31.2369

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@article{50df15fa42f840f99918d111872e25b3,

title = "Growth and characterization of titanium silicide films on natural diamond c(001) substrates",

abstract = "Initial results pertaining to the growth and characterization of TiSi2 films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi2 films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi2 have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi2 films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi2 films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi2 films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of ∼0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi2 contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.",

keywords = "High-temperature rectifying contacts, Raman spectroscopy scanning, Semiconducting diamond, Titanium silicide I diamond interface, Tunneling microscopy",

author = "Humphreys, {Trevor P.} and Labrasca, {John V.} and Turner, {Kevin F.} and Nemanich, {Robert J.} and Kalyankumar Das and Posthill, {John B.} and Hunn, {John D.} and Parikh, {Nalin R.}",

year = "1992",

month = aug,

doi = "10.1143/JJAP.31.2369",

language = "English (US)",

volume = "31",

pages = "2369--2373",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

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TY - JOUR

T1 - Growth and characterization of titanium silicide films on natural diamond c(001) substrates

AU - Humphreys, Trevor P.

AU - Labrasca, John V.

AU - Turner, Kevin F.

AU - Nemanich, Robert J.

AU - Das, Kalyankumar

AU - Posthill, John B.

AU - Hunn, John D.

AU - Parikh, Nalin R.

PY - 1992/8

Y1 - 1992/8

N2 - Initial results pertaining to the growth and characterization of TiSi2 films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi2 films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi2 have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi2 films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi2 films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi2 films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of ∼0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi2 contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

AB - Initial results pertaining to the growth and characterization of TiSi2 films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi2 films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi2 have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi2 films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi2 films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi2 films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of ∼0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi2 contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

KW - High-temperature rectifying contacts

KW - Raman spectroscopy scanning

KW - Semiconducting diamond

KW - Titanium silicide I diamond interface

KW - Tunneling microscopy

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Growth and characterization of titanium silicide films on natural diamond c(001) substrates

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