Growth and characterization of titanium silicide films on natural diamond C(001) substrates

Trevor P. Humphreys, John V. LaBrasca, Kevin F. Turner, Robert Nemanich, Kalyankumar Das, John B. Posthill, John D. Hunn, Nalin R. Parikh

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Initial results pertaining to the growth and characterization of TiSi2 films deposited on natural single crystal insulating and semiconducting diamond C(001) substrates are reported. The TiSi2 films were formed by the co-deposition of Si and Ti in ultra-high vacuum by electron-beam evaporation. From an analysis of the Raman scattering spectra, both the orthorhombic metastable C49 and stable C54 crystallographic phases of TiSi2 have been identified. As evidenced by scanning electron microscopy (SEM) and scanning tunneling microscopy (STM) the TiSi2 films exhibit a faceted surface morphology indicative of polycrystalline growth. Moreover, the TiSi2 films exhibit excellent adhesion properties with the underlying diamond substrate. Corresponding current-voltage (I-V) measurements conducted at room temperature have demonstrated rectifying characteristics for the TiSi2 films deposited on natural p-type semiconducting diamond substrates. Consistent with the small turn-on voltage of approx.0.2 V, the corresponding I-V measurements recorded at 400°C exhibit ohmic-like behavior. However, upon subsequent annealing of the TiSi2 contacts at 1100°C, stable rectifying I-V characteristics were observed in the 25-400°C temperature range.

Original languageEnglish (US)
Pages (from-to)2369-2373
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume31
Issue number8
StatePublished - Aug 1992
Externally publishedYes

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Diamonds
titanium
Titanium
diamonds
Semiconducting diamonds
Substrates
Ultrahigh vacuum
Electric potential
electric potential
Scanning tunneling microscopy
ultrahigh vacuum
Surface morphology
Raman scattering
scanning tunneling microscopy
Electron beams
Evaporation
adhesion
Adhesion
evaporation
Single crystals

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth and characterization of titanium silicide films on natural diamond C(001) substrates. / Humphreys, Trevor P.; LaBrasca, John V.; Turner, Kevin F.; Nemanich, Robert; Das, Kalyankumar; Posthill, John B.; Hunn, John D.; Parikh, Nalin R.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 31, No. 8, 08.1992, p. 2369-2373.

Research output: Contribution to journalArticle

Humphreys, Trevor P. ; LaBrasca, John V. ; Turner, Kevin F. ; Nemanich, Robert ; Das, Kalyankumar ; Posthill, John B. ; Hunn, John D. ; Parikh, Nalin R. / Growth and characterization of titanium silicide films on natural diamond C(001) substrates. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1992 ; Vol. 31, No. 8. pp. 2369-2373.
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AU - Das, Kalyankumar

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AU - Hunn, John D.

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