Growth and characterization of thin Si80C20 films based upon Si4C building blocks

John Kouvetakis; D. Chandrasekhar; David Smith

doi:10.1063/1.120876

Growth and characterization of thin Si₈₀C₂₀ films based upon Si₄C building blocks

John Kouvetakis, D. Chandrasekhar, David Smith

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Abstract

The growth of thin Si₈₀C₂₀ diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH₃)₄. The precursor decomposes at temperatures in the range 600-700 °C to give thin amorphous layers with a composition of Si_0.80C_0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si₄C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation.

Original language	English (US)
Pages (from-to)	930-932
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	8
DOIs	https://doi.org/10.1063/1.120876
State	Published - 1998

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.120876

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title = "Growth and characterization of thin Si80C20 films based upon Si4C building blocks",

abstract = "The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH3)4. The precursor decomposes at temperatures in the range 600-700 °C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation.",

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T1 - Growth and characterization of thin Si80C20 films based upon Si4C building blocks

AU - Kouvetakis, John

AU - Chandrasekhar, D.

AU - Smith, David

PY - 1998

Y1 - 1998

N2 - The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH3)4. The precursor decomposes at temperatures in the range 600-700 °C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation.

AB - The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH3)4. The precursor decomposes at temperatures in the range 600-700 °C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation.

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Growth and characterization of thin Si₈₀C₂₀ films based upon Si₄C building blocks

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