Growth and characterization of thin Si80C20 films based upon Si4C building blocks

John Kouvetakis, D. Chandrasekhar, David Smith

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23 Scopus citations


The growth of thin Si80C20 diamond-structured material on (100)Si has been achieved using the novel C-H free, carbon source tetrasilyl methane, C(SiH3)4. The precursor decomposes at temperatures in the range 600-700 °C to give thin amorphous layers with a composition of Si0.80C0.20, which corresponds to the same relative concentrations of Si and C as in the precursor. The amorphous material is crystallized via solid-phase epitaxy by annealing at 825 °C to yield a potentially ordered structure in which Si4C tetrahedra are linked together in a three-dimensional diamond-cubic framework. Measured lattice parameters are larger than expected from Vegards' Law, a discrepancy which is attributed to steric repulsions causing bond elongation.

Original languageEnglish (US)
Pages (from-to)930-932
Number of pages3
JournalApplied Physics Letters
Issue number8
StatePublished - 1998

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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