Growth and characterization of pseudomorphic single crystal zinc blende Mn

Brian Skromme; Yong-Hang Zhang; David Smith; S. Sivananthan

doi:10.1063/1.114294

Growth and characterization of pseudomorphic single crystal zinc blende Mn

Brian Skromme, Yong-Hang Zhang, David Smith, S. Sivananthan

Electrical Engineering

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61 Scopus citations

Abstract

We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

Original language	English (US)
Pages (from-to)	2690
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114294
State	Published - 1995

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Growth and characterization of pseudomorphic single crystal zinc blende Mn",

abstract = "We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.",

author = "Brian Skromme and Yong-Hang Zhang and David Smith and S. Sivananthan",

year = "1995",

doi = "10.1063/1.114294",

language = "English (US)",

volume = "67",

pages = "2690",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Growth and characterization of pseudomorphic single crystal zinc blende Mn

AU - Skromme, Brian

AU - Zhang, Yong-Hang

AU - Smith, David

AU - Sivananthan, S.

PY - 1995

Y1 - 1995

N2 - We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

AB - We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

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VL - 67

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JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Growth and characterization of pseudomorphic single crystal zinc blende Mn

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