Growth and characterization of pseudomorphic single crystal zinc blende Mn

Research output: Contribution to journalArticle

54 Citations (Scopus)

Abstract

We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

Original languageEnglish (US)
Pages (from-to)2690
Number of pages1
JournalApplied Physics Letters
Volume67
StatePublished - 1995

Fingerprint

zinc
single crystals
halites
high energy electrons
molecular beam epitaxy
electron diffraction
buffers
photoluminescence
transmission electron microscopy
temperature
high resolution

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth and characterization of pseudomorphic single crystal zinc blende Mn. / Skromme, Brian; Zhang, Yong-Hang; Smith, David; Sivananthan, S.

In: Applied Physics Letters, Vol. 67, 1995, p. 2690.

Research output: Contribution to journalArticle

@article{0c632349a7c64a9a87d886556021f08a,
title = "Growth and characterization of pseudomorphic single crystal zinc blende Mn",
abstract = "We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.",
author = "Brian Skromme and Yong-Hang Zhang and David Smith and S. Sivananthan",
year = "1995",
language = "English (US)",
volume = "67",
pages = "2690",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Growth and characterization of pseudomorphic single crystal zinc blende Mn

AU - Skromme, Brian

AU - Zhang, Yong-Hang

AU - Smith, David

AU - Sivananthan, S.

PY - 1995

Y1 - 1995

N2 - We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

AB - We report the growth and characterization of crystalline, single-phase zinc blende MnS (i.e., β-MnS). The material was grown on ZnSe buffer layers on (100) GaAs substrates, using solid-source molecular beam epitaxy and a novel valved S cracker with deposition at low (∼110°C) substrate temperatures. Characterization by reflection high energy electron diffraction, high resolution transmission electron microscopy, and low temperature photoluminescence confirms the pseudomorphic nature of the growth. Beyond a certain critical thickness, the layers either become amorphous or convert into the equilibrium rock salt polymorph (α-MnS), depending on the growth temperature.

UR - http://www.scopus.com/inward/record.url?scp=0000204588&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000204588&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0000204588

VL - 67

SP - 2690

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -