Growth and characterization of plasma-assisted molecular beam epitaxial-grown AlGaN/GaN heterostructures on free-standing hydride vapor phase epitaxy GaN substrates

Engineering & Materials Science

• Hall mobility 100%
• Molecular beams 88%
• Vapor phase epitaxy 87%
• Sheet resistance 68%
• Heterojunctions 64%
• Hydrides 62%
• High electron mobility transistors 57%
• Reflection high energy electron diffraction 51%
• Plasmas 45%
• Characterization (materials science) 43%
• Molecular beam epitaxy 38%
• Diffraction patterns 35%
• Substrates 35%
• Atomic force microscopy 31%
• Drain current 31%
• Structural properties 26%
• Electric properties 26%
• Electrons 24%
• Current density 24%
• X rays 22%
• Surface roughness 20%
• Testing 12%
• Temperature 9%

Physics & Astronomy

• vapor phase epitaxy 51%
• molecular beams 51%
• hydrides 50%
• characterization 27%
• high electron mobility transistors 25%
• leakage 20%
• electron mobility 12%
• high energy electrons 12%
• electron diffraction 10%
• molecular beam epitaxy 10%
• buffers 10%
• diffraction patterns 10%
• roughness 10%
• atomic force microscopy 9%
• wafers 9%
• electrical properties 9%
• current density 8%
• high resolution 7%
• room temperature 6%
• x rays 5%