Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire

Sandeep Iyer, David Smith, A. Bhattacharyya, K. Ludwig, T. D. Moustakas

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The majority of GaN films and related devices have been grown along the polar [0001] direction, and epitaxial growth along non-polar directions has received much less attention. In this paper we report the study of material properties of GaN and AlGaN/GaN multiple quantum wells (MQWs) deposited on R-plane (10-12) sapphire substrates using RF plasma-assisted molecular beam epitaxy (MBE). In this growth direction, III-Nitrides grow along the non-polar [11-20] direction, with the c-axis in the plane of growth. Various nucleation steps such as surface nitridation, as well as GaN and AlN buffer layers were investigated. Our results indicate that surface nitridation of R-plane sapphire is an undesirable nucleation step, contrary to what has been observed in the case of (0001) sapphire. The AlN buffer layer leads to well-oriented films along the [11-20] direction with many threading defects and faceted surface morphology whereas the GaN buffer leads to the formation of mis-oriented domains close to the buffer region. However, these domains are overgrown and the films have smoother surface morphology with fewer threading defects. These structural findings are supported by photoluminescence and Hall effect measurements done on the same films. Photoluminescence (PL) measurements of (11-20) AlGaN/GaN MQWs show much higher intensity than for similar structures grown on the C-plane sapphire, consistent with the absence of internal fields in the non-polar direction.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsC. Wetzel, E.T. Yu, J.S. Speck, A. Rizzi, Y. Arakawa
Pages133-138
Number of pages6
Volume743
StatePublished - 2002
EventGan and Related Alloys - 2002 - Boston, MA, United States
Duration: Dec 2 2002Dec 6 2002

Other

OtherGan and Related Alloys - 2002
CountryUnited States
CityBoston, MA
Period12/2/0212/6/02

Fingerprint

Aluminum Oxide
Sapphire
Semiconductor quantum wells
Nitridation
Buffer layers
Surface morphology
Photoluminescence
Nucleation
Defects
Buffers
Hall effect
Epitaxial growth
Molecular beam epitaxy
Nitrides
Materials properties
Plasmas
aluminum gallium nitride
Direction compound
Substrates

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Iyer, S., Smith, D., Bhattacharyya, A., Ludwig, K., & Moustakas, T. D. (2002). Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire. In C. Wetzel, E. T. Yu, J. S. Speck, A. Rizzi, & Y. Arakawa (Eds.), Materials Research Society Symposium - Proceedings (Vol. 743, pp. 133-138)

Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire. / Iyer, Sandeep; Smith, David; Bhattacharyya, A.; Ludwig, K.; Moustakas, T. D.

Materials Research Society Symposium - Proceedings. ed. / C. Wetzel; E.T. Yu; J.S. Speck; A. Rizzi; Y. Arakawa. Vol. 743 2002. p. 133-138.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Iyer, S, Smith, D, Bhattacharyya, A, Ludwig, K & Moustakas, TD 2002, Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire. in C Wetzel, ET Yu, JS Speck, A Rizzi & Y Arakawa (eds), Materials Research Society Symposium - Proceedings. vol. 743, pp. 133-138, Gan and Related Alloys - 2002, Boston, MA, United States, 12/2/02.
Iyer S, Smith D, Bhattacharyya A, Ludwig K, Moustakas TD. Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire. In Wetzel C, Yu ET, Speck JS, Rizzi A, Arakawa Y, editors, Materials Research Society Symposium - Proceedings. Vol. 743. 2002. p. 133-138
Iyer, Sandeep ; Smith, David ; Bhattacharyya, A. ; Ludwig, K. ; Moustakas, T. D. / Growth and characterization of non-polar (11-20) GaN and AlGaN/GaN MQWs on R-plane (10-12) sapphire. Materials Research Society Symposium - Proceedings. editor / C. Wetzel ; E.T. Yu ; J.S. Speck ; A. Rizzi ; Y. Arakawa. Vol. 743 2002. pp. 133-138
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