Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Stacia Keller; Yuvaraj Dora; Srabanti Chowdhury; Feng Wu; Xu Chen; Steven P. Denbaars; James S. Speck; Umesh K. Mishra

doi:10.1002/pssc.201000958

Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. Denbaars, James S. Speck, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

Original language	English (US)
Pages (from-to)	2086-2088
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	7-8
DOIs	https://doi.org/10.1002/pssc.201000958
State	Published - Jul 2011
Externally published	Yes

Keywords

Gallium nitride
Metal organic chemical vapour deposition
N-polar
Silicon

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201000958

Cite this

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title = "Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon",

abstract = "Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 11{\=2}. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.",

keywords = "Gallium nitride, Metal organic chemical vapour deposition, N-polar, Silicon",

author = "Stacia Keller and Yuvaraj Dora and Srabanti Chowdhury and Feng Wu and Xu Chen and Denbaars, {Steven P.} and Speck, {James S.} and Mishra, {Umesh K.}",

year = "2011",

month = jul,

doi = "10.1002/pssc.201000958",

language = "English (US)",

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pages = "2086--2088",

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T1 - Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

AU - Keller, Stacia

AU - Dora, Yuvaraj

AU - Chowdhury, Srabanti

AU - Wu, Feng

AU - Chen, Xu

AU - Denbaars, Steven P.

AU - Speck, James S.

AU - Mishra, Umesh K.

PY - 2011/7

Y1 - 2011/7

N2 - Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

AB - Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

KW - Gallium nitride

KW - Metal organic chemical vapour deposition

KW - N-polar

KW - Silicon

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

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ER -

Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Abstract

Keywords

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