Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon

Stacia Keller, Yuvaraj Dora, Srabanti Chowdhury, Feng Wu, Xu Chen, Steven P. Denbaars, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticle

5 Scopus citations

Abstract

Smooth, high quality N-polar GaN-on-silicon films with treading dislocation densities comparable to Ga-polar GaN-on-Si films and N-polar GaN/AlGaN/GaN transistors were demonstrated by metal-organic chemical vapour deposition on (111) Si substrates misoriented 3.5° toward 112̄. The N-polarity was established through high magnesium doping during deposition of the AlGaN strain management layers. The results encourage future exploration of N-polar (Al,Ga,In)N-on-silicon hetero-structures.

Original languageEnglish (US)
Pages (from-to)2086-2088
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume8
Issue number7-8
DOIs
Publication statusPublished - Jul 2011
Externally publishedYes

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Keywords

  • Gallium nitride
  • Metal organic chemical vapour deposition
  • N-polar
  • Silicon

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Keller, S., Dora, Y., Chowdhury, S., Wu, F., Chen, X., Denbaars, S. P., ... Mishra, U. K. (2011). Growth and characterization of N-polar GaN and AlGaN/GaN HEMTs on (111) silicon. Physica Status Solidi (C) Current Topics in Solid State Physics, 8(7-8), 2086-2088. https://doi.org/10.1002/pssc.201000958