GROWTH AND CHARACTERIZATION OF HIGH PURITY H//2-In-HCl-PH//3 VAPOR PHASE EPITAXY (VPE) InP.

T. J. Roth, Brian Skromme, T. S. Low, G. E. Stillman, L. M. Zinkiewicz

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Proceedings of SPIE - The International Society for Optical Engineering
Publisher	SPIE
Pages	36-44
Number of pages	9
Volume	V 323
State	Published - 1982
Externally published	Yes

ASJC Scopus subject areas

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title = "GROWTH AND CHARACTERIZATION OF HIGH PURITY H//2-In-HCl-PH//3 VAPOR PHASE EPITAXY (VPE) InP.",

author = "Roth, {T. J.} and Brian Skromme and Low, {T. S.} and Stillman, {G. E.} and Zinkiewicz, {L. M.}",

year = "1982",

language = "English (US)",

volume = "V 323",

pages = "36--44",

booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

publisher = "SPIE",

}

TY - GEN

T1 - GROWTH AND CHARACTERIZATION OF HIGH PURITY H//2-In-HCl-PH//3 VAPOR PHASE EPITAXY (VPE) InP.

AU - Roth, T. J.

AU - Skromme, Brian

AU - Low, T. S.

AU - Stillman, G. E.

AU - Zinkiewicz, L. M.

PY - 1982

Y1 - 1982

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UR - http://www.scopus.com/inward/citedby.url?scp=0020276756&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0020276756

VL - V 323

SP - 36

EP - 44

BT - Proceedings of SPIE - The International Society for Optical Engineering

PB - SPIE

ER -