Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers

David Smith, S. C Y Tsen, Y. P. Chen, S. Sivananthan, J. B. Posthill

Research output: Contribution to journalArticle

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Abstract

The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.

Original languageEnglish (US)
Pages (from-to)2086-2088
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number14
StatePublished - Sep 30 1996

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buffers
thick films
arcs
mercury cadmium tellurides
edge dislocations
crystal defects
electron microscopy
molecular beam epitaxy
microstructure
annealing
oxides
high resolution
defects
curves
crystals
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Smith, D., Tsen, S. C. Y., Chen, Y. P., Sivananthan, S., & Posthill, J. B. (1996). Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers. Applied Physics Letters, 69(14), 2086-2088.

Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers. / Smith, David; Tsen, S. C Y; Chen, Y. P.; Sivananthan, S.; Posthill, J. B.

In: Applied Physics Letters, Vol. 69, No. 14, 30.09.1996, p. 2086-2088.

Research output: Contribution to journalArticle

Smith, D, Tsen, SCY, Chen, YP, Sivananthan, S & Posthill, JB 1996, 'Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers', Applied Physics Letters, vol. 69, no. 14, pp. 2086-2088.
Smith D, Tsen SCY, Chen YP, Sivananthan S, Posthill JB. Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers. Applied Physics Letters. 1996 Sep 30;69(14):2086-2088.
Smith, David ; Tsen, S. C Y ; Chen, Y. P. ; Sivananthan, S. ; Posthill, J. B. / Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers. In: Applied Physics Letters. 1996 ; Vol. 69, No. 14. pp. 2086-2088.
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