Abstract
The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 2086-2088 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 69 |
| Issue number | 14 |
| State | Published - Sep 30 1996 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers. / Smith, David; Tsen, S. C Y; Chen, Y. P.; Sivananthan, S.; Posthill, J. B.
In: Applied Physics Letters, Vol. 69, No. 14, 30.09.1996, p. 2086-2088.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers
AU - Smith, David
AU - Tsen, S. C Y
AU - Chen, Y. P.
AU - Sivananthan, S.
AU - Posthill, J. B.
PY - 1996/9/30
Y1 - 1996/9/30
N2 - The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.
AB - The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.
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M3 - Article
AN - SCOPUS:0042505492
VL - 69
SP - 2086
EP - 2088
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 14
ER -