Abstract
The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.
Original language | English (US) |
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Pages (from-to) | 2086-2088 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 69 |
Issue number | 14 |
DOIs | |
State | Published - Sep 30 1996 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)