Growth and characterization of heteroepitaxial CdTe and ZnTe on Ge(001) buffer layers

David Smith, S. C Y Tsen, Y. P. Chen, S. Sivananthan, J. B. Posthill

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8 Scopus citations

Abstract

The microstructure of heteroepitaxial CdTe (001) and ZnTe(001) epilayers grown on Ge(001) buffer layers by molecular beam epitaxy has been characterized using electron microscopy. Apart from occasional {111} stacking faults originating at the interfacial region, the prevailing defects present in both systems are identified by high-resolution imaging as perfect Lomer edge dislocations with Burgers vectors of the type a/2〈110〉 parallel to the interface plane, which are indicative of well-relaxed material. Double-crystal rocking-curve measurements using Ge(001) buffer layers give full-width-at-half-maximum values of 210 arc-sec for a 7.5μm thick ZnTe film and 125 arc-sec for a 12μm thick CdTe film. Use of the Ge buffer layers on Si(001) substrates represents a valuable precursor for eventual growth of mercury cadmium telluride since this allows the substrate orientation to be maintained. The buffer layer also permits a substantial reduction of the in situ annealing temperature needed for substrate oxide removal.

Original languageEnglish (US)
Pages (from-to)2086-2088
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number14
DOIs
StatePublished - Sep 30 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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