Abstract

The GaAsSbN dilute-nitride alloy can be grown lattice-matched to GaAs with a bandgap of 1 eV, making it an ideal candidate for use in multijunction solar cells. In this work, using molecular beam epitaxy in conjunction with a radio-frequency nitrogen plasma source, the authors focus first on the growth optimization of the GaAsSb and GaAsN alloys in order to calibrate the Sb and N compositions independently of each other. After the optimum growth conditions to maintain two-dimensional growth were identified, the growth of GaAsSbN films was demonstrated. Both a GaAsSb0.076N0.018/GaAs heterostructure (100 nm thick) and a GaAsSb0.073N0.015/GaAs quantum well (11 nm thick) were grown. X-ray diffraction analysis reveals quite high crystal quality with a small lattice mismatch of 0.13%-0.16%. Secondary ion mass spectrometry profiling revealed that nitrogen was unintentionally incorporated in the GaAs buffer layer during the plasma ignition and stabilization. Nevertheless, a low temperature photoluminescence peak energy of 1.06 eV was measured for the GaAsSbN heterostructure sample while the quantum well emitted photoluminescence at 1.09 eV, which demonstrates promise for realizing 1-eV solar cells.

Original languageEnglish (US)
Article number02L106
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume34
Issue number2
DOIs
StatePublished - Mar 1 2016

Fingerprint

Heterojunctions
solar cells
Semiconductor quantum wells
Photoluminescence
quantum wells
Nitrogen plasma
photoluminescence
Lattice mismatch
nitrogen plasma
Plasma sources
Buffer layers
Secondary ion mass spectrometry
Molecular beam epitaxy
Nitrides
X ray diffraction analysis
secondary ion mass spectrometry
ignition
nitrides
Ignition
Solar cells

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Process Chemistry and Technology
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Materials Chemistry
  • Instrumentation

Cite this

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title = "Growth and characterization of GaAs1-x-ySbxNy/GaAs heterostructures for multijunction solar cell applications",
abstract = "The GaAsSbN dilute-nitride alloy can be grown lattice-matched to GaAs with a bandgap of 1 eV, making it an ideal candidate for use in multijunction solar cells. In this work, using molecular beam epitaxy in conjunction with a radio-frequency nitrogen plasma source, the authors focus first on the growth optimization of the GaAsSb and GaAsN alloys in order to calibrate the Sb and N compositions independently of each other. After the optimum growth conditions to maintain two-dimensional growth were identified, the growth of GaAsSbN films was demonstrated. Both a GaAsSb0.076N0.018/GaAs heterostructure (100 nm thick) and a GaAsSb0.073N0.015/GaAs quantum well (11 nm thick) were grown. X-ray diffraction analysis reveals quite high crystal quality with a small lattice mismatch of 0.13{\%}-0.16{\%}. Secondary ion mass spectrometry profiling revealed that nitrogen was unintentionally incorporated in the GaAs buffer layer during the plasma ignition and stabilization. Nevertheless, a low temperature photoluminescence peak energy of 1.06 eV was measured for the GaAsSbN heterostructure sample while the quantum well emitted photoluminescence at 1.09 eV, which demonstrates promise for realizing 1-eV solar cells.",
author = "Aymeric Maros and Nikolai Faleev and Richard King and Christiana Honsberg",
year = "2016",
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T1 - Growth and characterization of GaAs1-x-ySbxNy/GaAs heterostructures for multijunction solar cell applications

AU - Maros, Aymeric

AU - Faleev, Nikolai

AU - King, Richard

AU - Honsberg, Christiana

PY - 2016/3/1

Y1 - 2016/3/1

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AB - The GaAsSbN dilute-nitride alloy can be grown lattice-matched to GaAs with a bandgap of 1 eV, making it an ideal candidate for use in multijunction solar cells. In this work, using molecular beam epitaxy in conjunction with a radio-frequency nitrogen plasma source, the authors focus first on the growth optimization of the GaAsSb and GaAsN alloys in order to calibrate the Sb and N compositions independently of each other. After the optimum growth conditions to maintain two-dimensional growth were identified, the growth of GaAsSbN films was demonstrated. Both a GaAsSb0.076N0.018/GaAs heterostructure (100 nm thick) and a GaAsSb0.073N0.015/GaAs quantum well (11 nm thick) were grown. X-ray diffraction analysis reveals quite high crystal quality with a small lattice mismatch of 0.13%-0.16%. Secondary ion mass spectrometry profiling revealed that nitrogen was unintentionally incorporated in the GaAs buffer layer during the plasma ignition and stabilization. Nevertheless, a low temperature photoluminescence peak energy of 1.06 eV was measured for the GaAsSbN heterostructure sample while the quantum well emitted photoluminescence at 1.09 eV, which demonstrates promise for realizing 1-eV solar cells.

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