We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

Original languageEnglish (US)
Pages (from-to)432-440
Number of pages9
JournalActa Materialia
Issue number2
StatePublished - Jan 1 2009



  • Ab initio electron theory
  • Ba(ZnTa)O
  • Optical/electrical properties
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Tang, Z. Z., Liu, S. J., Singh, R., Bandyopadhyay, S., Sus, I., Kotani, T., Schilfgaarde, M. V., & Newman, N. (2009). Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films. Acta Materialia, 57(2), 432-440. https://doi.org/10.1016/j.actamat.2008.09.038