Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films

Z. Z. Tang; S. J. Liu; Rakesh Singh; S. Bandyopadhyay; I. Sus; T. Kotani; M. van Schilfgaarde; Nathan Newman

doi:10.1016/j.actamat.2008.09.038

Growth and characterization of epitaxial Ba(Zn_1/3Ta_2/3)O₃ (1 0 0) thin films

Z. Z. Tang, S. J. Liu, Rakesh Singh, S. Bandyopadhyay, I. Sus, T. Kotani, M. van Schilfgaarde, Nathan Newman

Research output: Contribution to journal › Article › peer-review

24 Scopus citations

Abstract

We have synthesized and characterized epitaxial and stoichiometric Ba(Zn_1/3Ta_2/3)O₃ (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn_1/3Ta_2/3)O₃ films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn_1/3Ta_2/3)O₃ thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn_1/3Ta_2/3)O₃ films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm^-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

Original language	English (US)
Pages (from-to)	432-440
Number of pages	9
Journal	Acta Materialia
Volume	57
Issue number	2
DOIs	https://doi.org/10.1016/j.actamat.2008.09.038
State	Published - Jan 2009

Keywords

Ab initio electron theory
Ba(ZnTa)O
Optical/electrical properties
Pulsed laser deposition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Polymers and Plastics
Metals and Alloys

Access to Document

10.1016/j.actamat.2008.09.038

Cite this

@article{ed613b38c6f94523b834c7cb04e0984e,

title = "Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films",

abstract = "We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.",

keywords = "Ab initio electron theory, Ba(ZnTa)O, Optical/electrical properties, Pulsed laser deposition",

author = "Tang, {Z. Z.} and Liu, {S. J.} and Rakesh Singh and S. Bandyopadhyay and I. Sus and T. Kotani and Schilfgaarde, {M. van} and Nathan Newman",

note = "Funding Information: This project is funded by the Army Research Office under contracts W911NF-04-1-0376 and W911NF-08-1-0473. The use of facilities in the LeRoy Eyring Center for Solid State Science (LE-CSSS) at Arizona State University is acknowledged. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.",

year = "2009",

month = jan,

doi = "10.1016/j.actamat.2008.09.038",

language = "English (US)",

volume = "57",

pages = "432--440",

journal = "Acta Materialia",

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T1 - Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films

AU - Tang, Z. Z.

AU - Liu, S. J.

AU - Singh, Rakesh

AU - Bandyopadhyay, S.

AU - Sus, I.

AU - Kotani, T.

AU - Schilfgaarde, M. van

AU - Newman, Nathan

N1 - Funding Information: This project is funded by the Army Research Office under contracts W911NF-04-1-0376 and W911NF-08-1-0473. The use of facilities in the LeRoy Eyring Center for Solid State Science (LE-CSSS) at Arizona State University is acknowledged. Copyright: Copyright 2009 Elsevier B.V., All rights reserved.

PY - 2009/1

Y1 - 2009/1

N2 - We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

AB - We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

KW - Ab initio electron theory

KW - Ba(ZnTa)O

KW - Optical/electrical properties

KW - Pulsed laser deposition

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