Abstract

We have synthesized and characterized epitaxial and stoichiometric Ba(Zn1/3Ta2/3)O3 (1 0 0) dielectric thin films grown on MgO (1 0 0) substrates by pulsed laser deposition. Advanced electronic structure calculations were used to guide the interpretation of the experimental data. Zn-enriched targets and high oxygen pressures were used to compensate for Zn loss during film growth. The Ba(Zn1/3Ta2/3)O3 films had an indirect optical band gap of ∼3.0 eV and a refractive index of 1.91 in the visible spectral range. Zn-Ta B-site ordering was not observed in the Ba(Zn1/3Ta2/3)O3 thin film X-ray diffraction data. A dielectric constant of 25 and dissipation factor of 0.0025 at 100 kHz were measured using the interdigital capacitor method. The Ba(Zn1/3Ta2/3)O3 films exhibited a small thermally activated ohmic leakage current at high fields (<250 kV cm-1) and high temperatures (<200 °C) with an activation energy of 0.85 eV.

Original languageEnglish (US)
Pages (from-to)432-440
Number of pages9
JournalActa Materialia
Volume57
Issue number2
DOIs
StatePublished - Jan 2009

Fingerprint

Thin films
Dielectric films
Optical band gaps
Film growth
Pulsed laser deposition
Leakage currents
Electronic structure
Refractive index
Capacitors
Permittivity
Activation energy
Oxygen
X ray diffraction
Substrates
Temperature

Keywords

  • Ab initio electron theory
  • Ba(ZnTa)O
  • Optical/electrical properties
  • Pulsed laser deposition

ASJC Scopus subject areas

  • Ceramics and Composites
  • Metals and Alloys
  • Polymers and Plastics
  • Electronic, Optical and Magnetic Materials

Cite this

Tang, Z. Z., Liu, S. J., Singh, R., Bandyopadhyay, S., Sus, I., Kotani, T., ... Newman, N. (2009). Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films. Acta Materialia, 57(2), 432-440. https://doi.org/10.1016/j.actamat.2008.09.038

Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films. / Tang, Z. Z.; Liu, S. J.; Singh, Rakesh; Bandyopadhyay, S.; Sus, I.; Kotani, T.; Schilfgaarde, M. van; Newman, Nathan.

In: Acta Materialia, Vol. 57, No. 2, 01.2009, p. 432-440.

Research output: Contribution to journalArticle

Tang, ZZ, Liu, SJ, Singh, R, Bandyopadhyay, S, Sus, I, Kotani, T, Schilfgaarde, MV & Newman, N 2009, 'Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films', Acta Materialia, vol. 57, no. 2, pp. 432-440. https://doi.org/10.1016/j.actamat.2008.09.038
Tang ZZ, Liu SJ, Singh R, Bandyopadhyay S, Sus I, Kotani T et al. Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films. Acta Materialia. 2009 Jan;57(2):432-440. https://doi.org/10.1016/j.actamat.2008.09.038
Tang, Z. Z. ; Liu, S. J. ; Singh, Rakesh ; Bandyopadhyay, S. ; Sus, I. ; Kotani, T. ; Schilfgaarde, M. van ; Newman, Nathan. / Growth and characterization of epitaxial Ba(Zn1/3Ta2/3)O3 (1 0 0) thin films. In: Acta Materialia. 2009 ; Vol. 57, No. 2. pp. 432-440.
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