Abstract

Pulsed Laser Deposition has been used to synthesize Ba(Co,Zn) 1/3Nb2/3O3 (BCZN) dielectric thin films on MgO (001) substrates. The BCZN films are epitaxial and have an orientation of (001) // MgO (001) and (100) // MgO (100) when deposited at substrate temperatures above 500 C. The film grown at 800 C has the best structural quality, with an X-ray diffraction rocking curve width of ∼0.5 and a channeling Rutherford Backscattering Spectrometry χmin value of 8.8%. The surface roughness decreases monotonically with increasing substrate temperature, with a ∼3 nm root mean square roughness value for the films deposited at 700 C. Optical transmission measurements indicate a strong direct transition at ∼4 eV and a refractive index of 2.0 in the visible range. A low-frequency dielectric constant of 34 was measured using a planar interdigital contact structure. The resistivity of the film is 3×1010 Ω cm at room temperature and has a thermal activation energy of 0.66 eV.

Original languageEnglish (US)
Pages (from-to)81-85
Number of pages5
JournalJournal of Crystal Growth
Volume387
DOIs
StatePublished - 2014

Fingerprint

Thin films
Substrates
thin films
Surface roughness
Dielectric films
Epitaxial films
Rutherford backscattering spectroscopy
Pulsed laser deposition
Light transmission
Crystal orientation
Temperature
Spectrometry
Refractive index
Permittivity
Activation energy
pulsed laser deposition
electric contacts
X ray diffraction
backscattering
surface roughness

Keywords

  • A3. Epitaxy
  • A3. Pulsed Laser Deposition
  • B1. Ba(Co,Zn)Nb O
  • B2. Microwave dielectrics

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Materials Chemistry
  • Inorganic Chemistry

Cite this

Growth and characterization of epitaxial Ba(Co,Zn)1/3Nb 2/3O3 thin films. / Li, Y.; Kopas, C.; Huang, M.; Bunish, K.; Newman, Nathan.

In: Journal of Crystal Growth, Vol. 387, 2014, p. 81-85.

Research output: Contribution to journalArticle

Li, Y. ; Kopas, C. ; Huang, M. ; Bunish, K. ; Newman, Nathan. / Growth and characterization of epitaxial Ba(Co,Zn)1/3Nb 2/3O3 thin films. In: Journal of Crystal Growth. 2014 ; Vol. 387. pp. 81-85.
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AU - Li, Y.

AU - Kopas, C.

AU - Huang, M.

AU - Bunish, K.

AU - Newman, Nathan

PY - 2014

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N2 - Pulsed Laser Deposition has been used to synthesize Ba(Co,Zn) 1/3Nb2/3O3 (BCZN) dielectric thin films on MgO (001) substrates. The BCZN films are epitaxial and have an orientation of (001) // MgO (001) and (100) // MgO (100) when deposited at substrate temperatures above 500 C. The film grown at 800 C has the best structural quality, with an X-ray diffraction rocking curve width of ∼0.5 and a channeling Rutherford Backscattering Spectrometry χmin value of 8.8%. The surface roughness decreases monotonically with increasing substrate temperature, with a ∼3 nm root mean square roughness value for the films deposited at 700 C. Optical transmission measurements indicate a strong direct transition at ∼4 eV and a refractive index of 2.0 in the visible range. A low-frequency dielectric constant of 34 was measured using a planar interdigital contact structure. The resistivity of the film is 3×1010 Ω cm at room temperature and has a thermal activation energy of 0.66 eV.

AB - Pulsed Laser Deposition has been used to synthesize Ba(Co,Zn) 1/3Nb2/3O3 (BCZN) dielectric thin films on MgO (001) substrates. The BCZN films are epitaxial and have an orientation of (001) // MgO (001) and (100) // MgO (100) when deposited at substrate temperatures above 500 C. The film grown at 800 C has the best structural quality, with an X-ray diffraction rocking curve width of ∼0.5 and a channeling Rutherford Backscattering Spectrometry χmin value of 8.8%. The surface roughness decreases monotonically with increasing substrate temperature, with a ∼3 nm root mean square roughness value for the films deposited at 700 C. Optical transmission measurements indicate a strong direct transition at ∼4 eV and a refractive index of 2.0 in the visible range. A low-frequency dielectric constant of 34 was measured using a planar interdigital contact structure. The resistivity of the film is 3×1010 Ω cm at room temperature and has a thermal activation energy of 0.66 eV.

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KW - A3. Pulsed Laser Deposition

KW - B1. Ba(Co,Zn)Nb O

KW - B2. Microwave dielectrics

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