Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al xGa 1-xN on SiC(0001) substrates and device-related research

Robert F. Davis, C. M. Balkas, L. Bergman, M. D. Bremser, O. H. Nam, W. G. Perry, I. Shmagin, Z. Sitar, B. L. Ward, T. Zheleva, R. Kolbas, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Single crystals of AlN and GaN were grown via sublimation-recondensation. Monocrystalline thin films and heterojunctions of GaN and Al xGa 1-xN alloys were grown via metalorganic vapor phase epitaxy (MOVPE). Selective growth of GaN and Al xGa 1-xN was conducted on stripe and circular patterned GaN/AlN/6-H-SiC multilayer substrates. Platinum-based ohmic and rectifying contacts were also fabricated via electron beam evaporation surfaces cleaned using Si deposition/flash evaporation techniques.

Original languageEnglish (US)
Title of host publicationLEOS Summer Topical Meeting
Editors Anon
PublisherIEEE
Pages9
Number of pages1
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

Other

OtherProceedings of the 1997 LEOS Summer Topical Meeting
CityMontreal, Can
Period8/11/978/15/97

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Davis, R. F., Balkas, C. M., Bergman, L., Bremser, M. D., Nam, O. H., Perry, W. G., Shmagin, I., Sitar, Z., Ward, B. L., Zheleva, T., Kolbas, R., & Nemanich, R. (1997). Growth and characterization of bulk crystals, thin films and patterned structures of AlN, GaN and Al xGa 1-xN on SiC(0001) substrates and device-related research In Anon (Ed.), LEOS Summer Topical Meeting (pp. 9). IEEE.