Abstract
Single crystals of AlN and GaN were grown via sublimation-recondensation. Monocrystalline thin films and heterojunctions of GaN and Al xGa 1-xN alloys were grown via metalorganic vapor phase epitaxy (MOVPE). Selective growth of GaN and Al xGa 1-xN was conducted on stripe and circular patterned GaN/AlN/6-H-SiC multilayer substrates. Platinum-based ohmic and rectifying contacts were also fabricated via electron beam evaporation surfaces cleaned using Si deposition/flash evaporation techniques.
Original language | English (US) |
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Title of host publication | LEOS Summer Topical Meeting |
Editors | Anon |
Publisher | IEEE |
Pages | 9 |
Number of pages | 1 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can Duration: Aug 11 1997 → Aug 15 1997 |
Other
Other | Proceedings of the 1997 LEOS Summer Topical Meeting |
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City | Montreal, Can |
Period | 8/11/97 → 8/15/97 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Atomic and Molecular Physics, and Optics