A study was performed on the gate voltage dependence of the low-field electron mobility in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.
ASJC Scopus subject areas
- Physics and Astronomy(all)