Green's function approach for transport calculation in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

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Abstract

A study was performed on the gate voltage dependence of the low-field electron mobility in a In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures. The Green's function approach was used for the transport calculation of the heterostructures. The mobility results for the structure revealed that alloy-disorder scattering was the dominant degradation mechanism.

Original languageEnglish (US)
Pages (from-to)3359-3363
Number of pages5
JournalJournal of Applied Physics
Volume93
Issue number6
DOIs
StatePublished - Mar 15 2003

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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