Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska; C. Prasad; H. H. Wieder; D. K. Ferry

Green's function approach for transport calculation in a In _0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

Abstract

An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In_0.53Ga_0.47As/In _0.52Al_0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at V_G=0 V.

Original language	English (US)
Pages (from-to)	1903-1907
Number of pages	5
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	21
Issue number	4
State	Published - Jul 2003

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Green's function approach for transport calculation in a In _0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure. / Vasileska, Dragica; Prasad, C.; Wieder, H. H. et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 21, No. 4, 07.2003, p. 1903-1907.

Research output: Contribution to journal › Article › peer-review

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AB - An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.

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Green's function approach for transport calculation in a In _0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

Abstract

ASJC Scopus subject areas

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