Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

Research output: Contribution to journalArticle

1 Scopus citations

Abstract

An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.

Original languageEnglish (US)
Pages (from-to)1903-1907
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 1 2003

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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