Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.

Original languageEnglish (US)
Pages (from-to)1903-1907
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume21
Issue number4
StatePublished - Jul 2003

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time functions
Electron mobility
electron mobility
Green's function
occupation
Heterojunctions
Green's functions
Modulation
formalism
modulation
Electric potential
electric potential
simulation

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.",
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AU - Wieder, H. H.

AU - Ferry, D. K.

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N2 - An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.

AB - An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.

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