Abstract
An investigation on the gate voltage dependence of the low-field electron mobility was performed in a In0.53Ga0.47As/In 0.52Al0.48As modulation-doped heterostructure. A real-time Green's function formalism was used for the purpose. It was found that the simulation results for the subband structure showed occupation of two subbands at VG=0 V.
Original language | English (US) |
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Pages (from-to) | 1903-1907 |
Number of pages | 5 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 21 |
Issue number | 4 |
State | Published - Jul 2003 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering