Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The gate voltage dependence of the low-field electron mobility has been investigated in a In0.53Ga0.47As/In0.52Al 0.48As modulation-doped heterostructure using a real-time Green's function formalism. All scattering mechanisms relevant for this material system have been incorporated in the theoretical model, including alloy disorder scattering, Coulomb scattering from the ionized impurities in the buffer layer, acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest occupation of two subbands at VG = 0 V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-De Haas oscillatory magnetoresistance measurements. The mobility results for the structure investigated suggest that alloy-disorder scattering is the dominant mobility degradation mechanism.

Original languageEnglish (US)
Pages (from-to)103-109
Number of pages7
JournalPhysica Status Solidi (B) Basic Research
Issue number1
StatePublished - Sep 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Green's function approach for transport calculation in a In <sub>0.53</sub>Ga<sub>0.47</sub>As/In<sub>0.52</sub>Al<sub>0.48</sub>As modulation-doped heterostructure'. Together they form a unique fingerprint.

Cite this