Green's function approach for transport calculation in a In 0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructure

Dragica Vasileska; C. Prasad; H. H. Wieder; D. K. Ferry

doi:10.1002/pssb.200303241

Green's function approach for transport calculation in a In _0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

Dragica Vasileska, C. Prasad, H. H. Wieder, D. K. Ferry

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3 Scopus citations

Abstract

The gate voltage dependence of the low-field electron mobility has been investigated in a In_0.53Ga_0.47As/In_0.52Al _0.48As modulation-doped heterostructure using a real-time Green's function formalism. All scattering mechanisms relevant for this material system have been incorporated in the theoretical model, including alloy disorder scattering, Coulomb scattering from the ionized impurities in the buffer layer, acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest occupation of two subbands at V_G = 0 V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-De Haas oscillatory magnetoresistance measurements. The mobility results for the structure investigated suggest that alloy-disorder scattering is the dominant mobility degradation mechanism.

Original language	English (US)
Pages (from-to)	103-109
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	239
Issue number	1
DOIs	https://doi.org/10.1002/pssb.200303241
State	Published - Sep 2003

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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abstract = "The gate voltage dependence of the low-field electron mobility has been investigated in a In0.53Ga0.47As/In0.52Al 0.48As modulation-doped heterostructure using a real-time Green's function formalism. All scattering mechanisms relevant for this material system have been incorporated in the theoretical model, including alloy disorder scattering, Coulomb scattering from the ionized impurities in the buffer layer, acoustic phonon and piezoelectric scattering. The simulation results for the subband structure suggest occupation of two subbands at VG = 0 V. Good agreement is observed between the simulated sheet electron densities and the experimentally extracted ones from Hall and Shubnikov-De Haas oscillatory magnetoresistance measurements. The mobility results for the structure investigated suggest that alloy-disorder scattering is the dominant mobility degradation mechanism.",

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AU - Prasad, C.

AU - Wieder, H. H.

AU - Ferry, D. K.

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Green's function approach for transport calculation in a In _0.53Ga_0.47As/In_0.52Al_0.48As modulation-doped heterostructure

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