Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth

Yuji Zhao, Sang Ho Oh, Feng Wu, Yoshinobu Kawaguchi, Shinichi Tanaka, Kenji Fujito, James S. Speck, Steven P. DenBaars, Shuji Nakamura

Research output: Contribution to journalArticle

62 Scopus citations

Abstract

We study the optical spectral properties for green semipolar (202̄1̄) and (202̄1) light-emitting diode (LED) with same indium compositions. Compared to (202̄1) devices, the fabricated (202̄1̄) micro-LED (∼0.005mm2) showed negligible blue shift and smaller full width at half maximum (FWHM) up to extremely high current densities (10,000 A/cm2). Theoretical simulation indicates that the (202̄1̄) InGaN quantum well (QW) has reduced polarization-related effects due to combined effects of electric field cancelling and Coulomb screening effect. In addition, the packaged device performance for small-area (∼0.144mm2) semipolar green (202̄1̄) and (202̄1) LEDs were also discussed. The green (202̄1̄) LED showed smaller wavelength shift and narrower FWHM than green LEDs fabricated on other planes.

Original languageEnglish (US)
Article number062102
JournalApplied Physics Express
Volume6
Issue number6
DOIs
StatePublished - Jun 1 2013
Externally publishedYes

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Zhao, Y., Oh, S. H., Wu, F., Kawaguchi, Y., Tanaka, S., Fujito, K., Speck, J. S., DenBaars, S. P., & Nakamura, S. (2013). Green semipolar (202̄1̄) InGaN light-emitting diodes with small wavelength shift and narrow spectral linewidth. Applied Physics Express, 6(6), [062102]. https://doi.org/10.7567/APEX.6.062102