Graphite in the bilayer regime: In-plane transport

D. B. Gutman, S. Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard

    Research output: Contribution to journalArticlepeer-review

    6 Scopus citations

    Abstract

    An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

    Original languageEnglish (US)
    Article number045418
    JournalPhysical Review B - Condensed Matter and Materials Physics
    Volume80
    Issue number4
    DOIs
    StatePublished - Aug 6 2009

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

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