Graphite in the bilayer regime

In-plane transport

D. B. Gutman, Sefaattin Tongay, H. K. Pal, D. L. Maslov, A. F. Hebard

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.

Original languageEnglish (US)
Article number045418
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume80
Issue number4
DOIs
StatePublished - Aug 6 2009
Externally publishedYes

Fingerprint

Graphite
graphite
Scattering
Phonons
Charge carriers
scattering
charge carriers
phonons
intervals
saturation
electrical resistivity
room temperature
Temperature

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Graphite in the bilayer regime : In-plane transport. / Gutman, D. B.; Tongay, Sefaattin; Pal, H. K.; Maslov, D. L.; Hebard, A. F.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 80, No. 4, 045418, 06.08.2009.

Research output: Contribution to journalArticle

Gutman, D. B. ; Tongay, Sefaattin ; Pal, H. K. ; Maslov, D. L. ; Hebard, A. F. / Graphite in the bilayer regime : In-plane transport. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 80, No. 4.
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