An interplay between the increase in the number of carriers and the decrease in the scattering time is expected to result in a saturation of the in-plane resistivity, ρab, in graphite above room temperature. Contrary to this expectation, we observe a pronounced increase in ρab in the interval between 300 and 900 K. We provide a theory of this effect based on intervalley scattering of charge carriers by high-frequency, graphenelike optical phonons.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Aug 6 2009|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics